NTMFD4C20NT1G

$2.39

Description：MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Series：-

SKU:bec357b69f30 Category: FET, MOSFET Arrays Brand: onsemi

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Product introduction

NTMFD4C20NT1G is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 9.1A/13.7A 8DFN. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for NTMFD4C20NT1G

Description：MOSFET 2N-CH 30V 9.1A/13.7A 8DFN
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：9.1A, 13.7A
Rds On (Max) @ Id, Vgs：7.3mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：970pF @ 15V
Power - Max：1.09W, 1.15W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for NTMFD4C20NT1G

NTMFD4C20NT1G

FET, MOSFET Arrays Overview

The NTMFD4C20NT1G is a dual N-channel power MOSFET manufactured by onsemi. It features a DFN8 surface-mount package and supports a drain-source voltage of 30V. The device provides continuous drain currents of 9.1A and 13.7A, with associated power dissipation ratings of 1.09W and 1.15W respectively. This component utilizes silicon technology for robust performance in low-voltage switching applications.

FET, MOSFET Arrays Feature Summary

Dual N-Channel configuration for efficient space-saving circuit design
Low voltage operation optimized for modern portable electronics
Surface-mount DFN8 package for automated assembly integration

FET, MOSFET Arrays Applications

Portable consumer electronics power management
Battery-powered device switching circuits
Low-voltage DC-DC converter stages

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix 'T1G' to confirm lead-free packaging compliance and tape-and-reel quantity specifications. Confirm current lifecycle status as some sources indicate end-of-life planning. Ensure compatibility with DFN8 footprint requirements during procurement validation.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required within a compact DFN8 form factor. Evaluate thermal constraints carefully due to the low power dissipation ratings inherent to the small package size. Compare against single-channel alternatives if higher individual channel current capacity is necessary for the specific load requirements.

FET, MOSFET Arrays Part Context

This part belongs to onsemi's low-voltage MOSFET portfolio designed for high-density applications. The dual configuration allows for bridge or half-bridge implementations without occupying additional board area compared to discrete single devices.