NTMFD4C85NT1G

Overview

The NTMFD4C85NT1G is a PowerPhase dual N-channel MOSFET in a DFN8 (CASE 506CR) package. It integrates a high-side FET (Q1) and a low-side FET (Q2) with a 30 V drain-to-source voltage rating. Q1 offers a maximum on-resistance of 3.0 mΩ at 10 V gate drive and a continuous current of 20.1 A, while Q2 provides 0.8 mΩ at 10 V and 39 A. The device minimizes parasitic inductances through co-packaging, supporting switching frequencies up to 300 kHz with optimized thermal performance for board space efficiency.

Feature Summary

• Co-packaged power stage solution designed to minimize board space requirements
• Minimized parasitic inductances achieved through integrated topological design
• Optimized device architecture specifically engineered to reduce conduction and switching power losses

Applications

• DC-DC Converters
• System Voltage Rails
• Point of Load

Procurement Notes

Verify the component against the official datasheet revision Rev. 2 dated February 2016. Confirm the ordering suffix NT1G corresponds to the 1500-unit tape and reel packaging format. Ensure the part meets RoHS compliance standards and verify that the DFN8 package dimensions align with CASE 506CR specifications before integration into production designs.

Selection Notes

Select this component when board area constraints require a compact half-bridge configuration. The dual N-channel topology supports asymmetric current handling, making it suitable for applications where the low-side switch requires higher current capacity than the high-side switch. Evaluate thermal resistance values based on specific PCB copper area and pad size configurations to ensure adequate heat dissipation under steady-state operating conditions.

Part Context

This component belongs to the PowerPhase series by onsemi, which focuses on integrating complementary transistors into single packages. The DFN8 form factor distinguishes it from traditional SO-8 or TO-220 discrete arrangements. It serves as an alternative to separate high-side and low-side MOSFETs, simplifying layout and reducing interconnect inductance in synchronous buck converter architectures.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.