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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 11.3A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：11.3A, 18.1A
- Rds On (Max) @ Id, Vgs：5.4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1153pF @ 15V
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
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Overview
The NTMFD4C86NT1G is a PowerPhase dual N-Channel MOSFET in a DFN8 (5x6 mm) package. It integrates a high-side FET (Q1) and a low-side FET (Q2). Q1 features a V(BR)DSS of 30 V, RDS(on) max of 5.4 mΩ at VGS=10V/ID=30A, and ID max of 20 A. Q2 has a V(BR)DSS of 30 V, RDS(on) max of 2.6 mΩ at VGS=10V/ID=30A, and ID max of 32 A. Both devices operate with VGS limits of ±20 V and support junction temperatures up to +150°C.
Feature Summary
- Co-packaged power stage solution designed to minimize board space and parasitic inductances.
- Optimized device architecture to reduce conduction and switching power losses.
Applications
- DC-DC Converters
- System Voltage Rails
- Point of Load
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. The NTMFD4C86NT1G variant typically ships in tape and reel format. Confirm RoHS compliance and lead-free status requirements for the target assembly process before finalizing procurement orders.
Selection Notes
Select this component for applications requiring a compact dual-N-channel configuration with a 30 V rating. Ensure the gate drive voltage supports the specified RDS(on) conditions, typically 10 V or 4.5 V depending on current load. Verify thermal management capabilities align with the junction-to-ambient resistance values provided in the datasheet for steady-state operation.
Part Context
This part belongs to the PowerPhase series from onsemi, which focuses on integrated dual-FET solutions. It utilizes the DFN8 (CASE 506CR) package to provide a small footprint compared to discrete components. The series is engineered for high-efficiency power conversion stages where space constraints are critical.
Replacement Considerations
Direct replacements must match the 30 V rating, DFN8 package, and complementary RDS(on) characteristics. Verify pinout compatibility, specifically the shared SW node and separate gate connections. Check if alternative parts offer similar parasitic inductance reduction features for equivalent performance.
