NTMFD4C86NT3G

Overview

The NTMFD4C86NT3G is a PowerPhase dual N-channel MOSFET in a DFN8 (5x6 mm) package. It integrates a high-side FET (Q1) and a low-side FET (Q2). Q1 offers a maximum drain current of 20 A with an on-resistance of 5.4 mΩ at VGS=10V. Q2 supports up to 32 A with an on-resistance of 2.6 mΩ at VGS=10V. Both devices feature a 30 V drain-to-source breakdown voltage. The co-packaged design minimizes parasitic inductances and board space, optimizing power loss for efficient switching applications.

Feature Summary

• Co-packaged power stage solution designed to minimize board space and parasitic inductances.
• Optimized device architecture specifically engineered to reduce power losses during operation.

Applications

• DC-DC Converters
• System Voltage Rails
• Point of Load

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The NTMFD4C86NT3G variant corresponds to a tape and reel quantity of 5000 units in the DFN8 package. Confirming the exact suffix ensures alignment with required shipping specifications and handling procedures.

Selection Notes

Select this component for designs requiring a compact dual-N-channel configuration with distinct high-side and low-side current capabilities. The integrated layout reduces external component count and loop inductance. Ensure gate drive voltages align with the specified thresholds for optimal RDS(on) performance across the operating temperature range.

Part Context

This part belongs to the PowerPhase series from onsemi, which focuses on integrating complementary MOSFETs into single packages. This approach simplifies PCB layout and improves thermal management compared to discrete solutions. The DFN8 footprint provides a balance between thermal dissipation and spatial efficiency for modern power electronics.

Replacement Considerations

Direct substitutes include the NTMFD4C86NT1G, which shares identical electrical characteristics but differs in packaging quantity (1500 units per tape and reel). Verify pinout compatibility and thermal resistance values when transitioning between these variants.

FAQ

What are the continuous drain current ratings for the high-side and low-side FETs?

The high-side FET (Q1) has a continuous drain current rating of 20 A, while the low-side FET (Q2) supports 32 A under steady-state conditions at 25°C.

How does the package type contribute to performance?

The DFN8 package minimizes parasitic inductances due to its co-packaged design, which enhances switching speed and reduces electromagnetic interference in high-frequency applications.

What is the maximum drain-to-source voltage for both FETs?

Both the high-side and low-side FETs share a maximum drain-to-source voltage (V(BR)DSS) rating of 30 V.