ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 11.7A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：11.7A, 14.9A
- Rds On (Max) @ Id, Vgs：5.4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1252pF @ 15V
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6)
- Grade：-
- Qualification：-
Download product information
Overview
The NTMFD4C87NT3G is a PowerPhase dual N-channel MOSFET in an SO8FL (DFN8) package. It integrates a high-side FET (Q1) and a low-side FET (Q2). Q1 offers a maximum RDS(on) of 5.4 mΩ at VGS=10V and 8.1 mΩ at VGS=4.5V, with a continuous drain current of 15.4A at TA=25°C. Q2 provides a maximum RDS(on) of 3.1 mΩ at VGS=10V and 4.3 mΩ at VWS=4.5V, supporting a continuous drain current of 19.5A at TA=25°C. Both devices feature a 30V drain-source breakdown voltage.
Feature Summary
- Co-packaged power stage solution designed to minimize board space and parasitic inductances.
- Optimized device architecture to reduce power losses during switching and conduction.
- Compliant with RoHS standards and free from lead, halogens, and brominated flame retardants.
Applications
- DC-DC Converters
- System Voltage Rails
- Point of Load
Procurement Notes
Verify the specific ordering suffix 'T3G' corresponds to the required tape and reel quantity of 5000 units. Confirm that the DFN8 package dimensions align with the target PCB footprint. Ensure the application environment remains within the specified operating junction temperature range of -55°C to +150°C for reliable operation.
Selection Notes
Select this component when board area is constrained due to its integrated dual-FET configuration. Choose based on the required gate drive voltage; performance differs significantly between 4.5V and 10V logic levels. Verify thermal management requirements against the steady-state junction-to-ambient resistance values provided in the datasheet.
Part Context
This part belongs to the PowerPhase series by onsemi, which focuses on integrating complementary FETs into a single package. The NTMFD4C87N/D datasheet serves as the primary reference document. The T3G suffix indicates a specific packaging format distinct from other variants like T1G.
Replacement Considerations
Direct substitutes include NTMFD4C87NT1G, which shares identical electrical characteristics but differs in packaging quantity. Other dual N-channel SO8FL devices may require verification of pin compatibility and RDS(on) specifications.
