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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 7A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：7A (Ta), 22A (Tc)
- Rds On (Max) @ Id, Vgs：33mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：540pF @ 25V
- Power - Max：3.2W (Ta), 32W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：-
- Qualification：-
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Overview
The NTMFD5875NLT1G is a dual N-channel MOSFET from onsemi, rated for 60V drain-source voltage and 22A continuous drain current. It utilizes the SO-8FL-Dual-8 package and meets AEC-Q101 automotive qualification standards. The device features low on-resistance and capacitance to minimize conduction and switching losses. It is designed for high-efficiency power management applications requiring robust performance in compact form factors.
Feature Summary
- Dual N-channel configuration integrated into a single compact package
- Automotive-grade reliability certified under AEC-Q101 standards
- Optimized low on-resistance for efficient power conversion
- Low gate charge and capacitance for reduced switching losses
Applications
- Automotive power distribution systems
- High-efficiency DC-DC converter stages
- Motor control circuits
- Industrial load switching applications
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm lot traceability and RoHS compliance status prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain solderability and electrical integrity during assembly processes.
Selection Notes
Select this component for designs requiring dual-channel isolation within a minimal footprint. Evaluate thermal dissipation capabilities against system heat loads. Consider gate drive voltage compatibility with logic-level inputs. Verify that the 60V rating exceeds peak circuit voltages with adequate safety margins.
Part Context
This part belongs to onsemi's advanced MOSFET portfolio, emphasizing automotive durability and power density. It complements other devices in the series by offering balanced performance between conduction efficiency and switching speed. The SO-8FL package supports automated surface-mount assembly for high-volume manufacturing environments.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before implementation. Ensure any substitute meets the same AEC-Q101 qualification standards if used in automotive contexts.
