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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 14A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta), 52A (Tc)
- Rds On (Max) @ Id, Vgs：7.4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：997pF @ 25V
- Power - Max：3W (Ta), 40W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：-
- Qualification：-
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Overview
The NTMFD5C466NLT1G is a dual N-channel MOSFET from onsemi, housed in an 8-PowerTDFN (5x6 mm) package. It features a drain-source breakdown voltage of 40 V and a continuous drain current of 52 A at case temperature. The device exhibits a maximum on-resistance of 7.4 mΩ at 10 V gate drive and a gate charge of 16 nC. Rated for automotive applications under AEC-Q101 standards, it supports junction temperatures up to 175°C with a power dissipation capacity of 40 W.
Feature Summary
- Dual configuration providing two independent N-channel switches within a compact footprint.
- Automotive-grade reliability certified to AEC-Q101 standards for harsh environment operation.
- Low on-resistance minimizes conduction losses and improves overall system efficiency.
- Compact 5x6 mm PowerTDFN package facilitates high-density PCB layout.
Applications
- Automotive power distribution systems
- Motor control circuits
- DC-DC converter output stages
Procurement Notes
Verify the specific suffix 'LT1G' against the manufacturer's latest datasheet to confirm packaging details and compliance status. Ensure the ordering part number matches the required tape-and-reel quantity. Cross-reference the component marking with official identification guides to prevent counterfeit substitution during assembly.
Selection Notes
Select this component when a dual N-channel topology is required in a space-constrained automotive application. Compare the 7.4 mΩ on-resistance against thermal requirements to ensure adequate heat dissipation without external heatsinks. Verify that the 40 V rating provides sufficient margin for the target supply voltage and transient spikes.
Part Context
This device belongs to the NTMFD5C466NL family of low-voltage power MOSFETs. It shares electrical characteristics with variants such as NVMFD5C466NT1G but differs in packaging or specific manufacturing lot attributes. The series is designed to replace older discrete solutions by integrating two channels into a single optimized footprint.
Replacement Considerations
Direct pin-compatible alternatives include the NVMFD5C466NT1G. Verify that substitute parts maintain identical Rds(on) and Qg specifications to preserve switching performance and thermal management profiles in existing designs.
