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The onsemi NTMFD5C466NT1G is a dual N-channel enhancement mode MOSFET array housed in an 8-DFN (5x6 mm) surface-mount package. It features a drain-source breakdown voltage of 40 V and a continuous drain current of 49 A at case temperature of 25°C, with a maximum power dissipation of 38 W under the same conditions. The device exhibits a low on-resistance of 8.1 mΩ at a gate-source voltage of 10 V and a gate charge of 11 nC. Designed for automotive applications, it holds AEC-Q101 certification and supports a junction temperature range from -55°C to +175°C.
Verify the specific suffix 'T1G' against the manufacturer's datasheet to confirm packaging details and compliance status. Ensure that the ordering information matches the exact component designation required for the design. Cross-reference the part number with official distributor catalogs to validate authenticity and availability before finalizing procurement plans.
Select this component when a dual N-channel MOSFET is required in a small DFN package for automotive or portable applications. Consider the 40V rating and 49A current capacity relative to the thermal environment. Evaluate the 8.1mΩ on-resistance for efficiency requirements and verify compatibility with the system's gate drive voltage levels.
This part belongs to the NVMFD5C466NL family of dual N-channel MOSFETs from onsemi. It shares similar electrical characteristics with variants such as NVMFD5C466N and NVMFD5C466NLET1G, differing primarily in packaging options and specific suffix designations. The series is engineered for high-efficiency power switching in compact form factors.
Direct substitutes include NVMFD5C466NT1G and NVMFD5C466NLET1G. Verify pinout compatibility and electrical parameters before substitution.