NTMFD5C470NLT1G

Overview

The onsemi NTMFD5C470NLT1G is a dual N-channel power MOSFET designed for high-efficiency switching applications. It features a 40V drain-source breakdown voltage and supports a continuous drain current of 36A at case temperature. The device incorporates a low on-resistance of 11.5mΩ, minimizing conduction losses in power conversion circuits. Packaged in an 8-DFN (5x6mm) footprint, it offers enhanced thermal performance and compact board space utilization. With a maximum power dissipation of 46W and an operating junction temperature range up to 175°C, this component ensures reliable operation under demanding electrical and thermal conditions.

Feature Summary

• Dual N-channel configuration provides independent control within a single package
• Low on-resistance design reduces conduction losses and improves overall efficiency
• Compact DFN-8 package facilitates high-density PCB layouts and improved thermal management

Applications

• DC-DC converter modules requiring compact form factors
• Power distribution units in industrial equipment
• Automotive electronic control systems

Procurement Notes

Verify the exact part number against official manufacturer documentation before procurement. Confirm that the suffix LT1G corresponds to the specific reel or cut tape packaging requirements for your assembly line. Ensure compatibility with RoHS directives if applicable to your region. Cross-reference the datasheet revision date to guarantee access to the most recent electrical characteristics and mechanical drawings.

Selection Notes

Select this component when a dual N-channel topology is required within a limited surface area. Evaluate the 11.5mΩ on-resistance against your specific load current to ensure acceptable thermal performance without excessive heatsinking. Consider the 40V voltage rating relative to your system's peak transient voltages to maintain adequate safety margins during switching operations.

Part Context

This device belongs to onsemi's PowerTrench family of low-voltage MOSFETs, engineered for superior Rds(on) versus area performance. The dual-channel architecture allows for synchronized switching or half-bridge configurations in a minimal footprint. It represents a solution for modern electronics prioritizing both power density and thermal reliability in constrained spaces.

Replacement Considerations

Direct replacements must match the 40V Vds, 36A Id, and 11.5mΩ Rds(on) specifications within the same DFN-8 package. Verify pinout compatibility to prevent circuit damage during substitution. Check if alternative manufacturers offer equivalent thermal resistance values for similar mounting conditions.