NTMFD6H840NLT1G

Overview

The NTMFD6H840NLT1G is a dual N-channel power MOSFET from onsemi, housed in a DFN8 (SO-8FL) package measuring 5 x 6 mm. It features an 80 V drain-to-source voltage rating and supports a continuous drain current of 74 A at TC = 25°C. The device exhibits a low on-resistance of 6.9 mΩ at VGS = 10 V and 8.8 mΩ at VGS = 4.5 V. Key electrical parameters include a total gate charge of 32 nC at VGS = 10 V, a maximum power dissipation of 90 W at TC = 25°C, and a junction temperature range of -55°C to +175°C.

Feature Summary

• Dual configuration within a compact 5 x 6 mm footprint for space-constrained designs
• Low on-resistance minimizes conduction losses during operation
• Reduced gate charge and capacitance lower driver circuit losses

Applications

• High-density power modules requiring small footprints
• Portable electronic devices with limited board space
• Industrial control systems needing efficient switching

Procurement Notes

Verify the specific ordering suffix T1G corresponds to tape and reel packaging containing 1500 units per reel. Confirm RoHS compliance and lead-free status through official manufacturer documentation before finalizing procurement specifications.

Selection Notes

Evaluate thermal resistance values based on actual PCB copper pad dimensions and ambient conditions rather than relying solely on datasheet constants. Ensure gate drive voltages remain within the specified limits to maintain optimal on-resistance performance without exceeding maximum ratings.

Part Context

This component belongs to the NTMFD6H840NL series of dual N-channel MOSFETs manufactured by onsemi. It utilizes silicon technology and is designed for surface-mount applications using the SO-8FL-Dual package format.

Replacement Considerations

Consult official substitution guides for verified alternatives. Do not assume functional equivalence with other models sharing similar voltage or current ratings without cross-referencing specific pinout and parameter data.