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NTMFS4C06NCT1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is NFET SO8FL 30V 69A 4MOHM. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTMFS4C06NCT1G
- Description：NFET SO8FL 30V 69A 4MOHM
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：20A (Ta), 69A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1683 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.55W (Ta), 30.5W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：5-DFN (5x6) (8-SOFL)
- Package / Case：8-PowerTDFN, 5 Leads
Single FETs, MOSFETs datasheet and documents for NTMFS4C06NCT1G
Single FETs, MOSFETs Overview
The NTMFS4C06NCT1G is a single N-channel power MOSFET manufactured by onsemi, housed in an SO-8 FL (DFN5 5x6) package. It features a drain-to-source voltage of 30 V and a continuous drain current of 69 A at TC = 25°C. The device exhibits a maximum on-resistance of 4.0 mΩ at VGS = 10 V and 6.0 mΩ at VGS = 4.5 V. Key electrical parameters include a total gate charge of 26 nC at VGS = 10 V and a forward transconductance of 58 S. Thermal resistance from junction to case is 4.1 °C/W, with an operating junction temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Low RDS(on) designed to minimize conduction losses
- Optimized gate charge characteristics to reduce switching losses
- Low capacitance values intended to minimize driver losses
Single FETs, MOSFETs Applications
- CPU Power Delivery
- DC-DC Converters
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix CT1G against official documentation to confirm tape and reel specifications, as standard ordering information lists T1G. Confirm RoHS compliance and Pb-free status directly with the manufacturer or authorized distributors. Ensure the SO-8 FL footprint matches the design requirements before procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low thermal resistance and high current handling in compact packages. Evaluate the 4.0 mΩ on-resistance at VGS = 10 V for efficiency needs. Consider the 6.0 mΩ rating at VGS = 4.5 V if driving logic levels are limited. Verify thermal management capabilities given the 4.1 °C/W junction-to-case resistance.
Single FETs, MOSFETs Part Context
This part belongs to the NTMFS4C06N series of single N-channel MOSFETs. It utilizes onsemi's trench technology within an SO-8 FL package to achieve high performance in a small form factor. The series is engineered for power delivery applications where space constraints and thermal efficiency are critical design factors.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for verified equivalents. Generic replacements may not match the specific thermal or electrical characteristics of the SO-8 FL package.
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