NTMFS4C806NT1G

Description：MOSFET N-CH 30V 5DFN
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:e18d7d4f7e58 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NTMFS4C806NT1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 30V 5DFN. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTMFS4C806NT1G

Description：MOSFET N-CH 30V 5DFN
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.41mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11.6 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1683 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：770mW (Ta), 30.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：5-DFN (5x6) (8-SOFL)
Package / Case：8-PowerTDFN, 5 Leads

Single FETs, MOSFETs datasheet and documents for NTMFS4C806NT1G

NTMFS4C806NT1G

Single FETs, MOSFETs Overview

The NTMFS4C806NT1G is an obsolete N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes Trench 6 technology and is housed in a surface-mount SO-8FL (5x6mm) package. The device features a drain-source voltage rating of 30V and a continuous drain current capacity of 52A at case temperature. Key electrical parameters include a maximum on-resistance of 5.8mΩ, a gate charge of 18.2nC at 10V, and a threshold voltage of 2.1V. The component supports a junction temperature range from -55°C to +150°C with a power dissipation of 760mW at ambient conditions.

Single FETs, MOSFETs Feature Summary

Utilizes Trench 6 technology for optimized performance
Designed for high-efficiency switching applications
Features low on-resistance for reduced conduction losses

Single FETs, MOSFETs Applications

DC-DC converter circuits
Power management systems
Motor control interfaces

Single FETs, MOSFETs Procurement Notes

This specific part number is officially discontinued and no longer in production. Verification of availability should focus exclusively on authorized distributors offering surplus or secondary market stock. Direct procurement from the manufacturer is not possible. Engineers must confirm the authenticity of any available units through rigorous supply chain verification processes before integration into designs.

Single FETs, MOSFETs Selection Notes

Designers requiring this component should evaluate alternative parts within the same family that remain active. Substitutes such as the NTMFS4C09NT1G offer similar electrical characteristics and packaging but are currently in production. Selection should prioritize components with confirmed long-term availability to ensure supply chain stability for manufacturing and maintenance phases.

Single FETs, MOSFETs Part Context

The NTMFS4C806NT1G belongs to the NTMFS4C08N series of single N-channel MOSFETs. This series is characterized by its use of advanced trench gate technology to achieve low on-resistance in compact packages. The SO-8FL form factor provides efficient thermal dissipation relative to its footprint, making it suitable for space-constrained power electronics applications.