NTMFS4C808NT1G-01

$0.39

Description：NTMFS4C808NT1G-01
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)

SKU:6d038281ec3a Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NTMFS4C808NT1G-01 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is NTMFS4C808NT1G-01. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTMFS4C808NT1G-01

Description：NTMFS4C808NT1G-01
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.4 nC @ 4.5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1670 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：760mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：5-DFN (5x6) (8-SOFL)
Package / Case：8-PowerTDFN

Single FETs, MOSFETs datasheet and documents for NTMFS4C808NT1G-01

NTMFS4C808NT1G-01

Single FETs, MOSFETs Overview

The onsemi NTMFS4C808NT1G-01 is an N-channel enhancement mode MOSFET housed in a 5-DFN (5x6) or 8-SOFL surface-mount package. It features a drain-source voltage rating of 30 V and a continuous drain current of 9 A at Ta, extending to 52 A at Tc. The device exhibits a maximum on-resistance of 5.8 mΩ, with a gate charge of 18.2 nC at 10 V and a threshold voltage up to 2.1 V. Power dissipation is rated at 760 mW at ambient temperature. Operating temperatures range from -55°C to +150°C junction.

Single FETs, MOSFETs Feature Summary

Logic-level gate drive capability for efficient control
Low on-resistance for reduced conduction losses
Enhanced thermal performance via exposed pad design

Single FETs, MOSFETs Applications

High-efficiency power management circuits
DC-DC converter output stages
Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm exact electrical tolerances and packaging variations. Confirm component availability status as listings may indicate end-of-life or discontinuation phases. Ensure procurement channels provide authentic parts with traceable manufacturing data to prevent counterfeit risks.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low-voltage operation with moderate current handling in compact footprints. Evaluate thermal resistance requirements carefully due to the small package size. Compare gate charge specifications against driver capabilities to ensure optimal switching speeds and minimize transition losses in the target application circuit.

Single FETs, MOSFETs Part Context

This part belongs to the NTMFS4C08N series of N-channel MOSFETs from onsemi. It utilizes trench technology to achieve low RDS(on) within a small form factor. The series is designed for high-efficiency applications where space constraints and thermal management are critical considerations for system designers.