Single FETs, MOSFETs NTMYS9D3N06CLTWG product image

NTMYS9D3N06CLTWG

$2.29
  • Description:MOSFET N-CH 60V T6 LFPAK4
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:6845ccb3c606 Category: Brand:

  
  • Quantity
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NTMYS9D3N06CLTWG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V T6 LFPAK4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTMYS9D3N06CLTWG

  • Description:MOSFET N-CH 60V T6 LFPAK4
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:14A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:LFPAK4 (5x6)
  • Package / Case:SOT-1023, 4-LFPAK

Single FETs, MOSFETs datasheet and documents for NTMYS9D3N06CLTWG

NTMYS9D3N06CLTWG

Single FETs, MOSFETs Overview

The NTMYS9D3N06CLTWG is a single N-channel power MOSFET manufactured by onsemi. It features a 60 V drain-to-source voltage rating and a continuous drain current of 50 A at TC = 25°C. The device exhibits a maximum RDS(on) of 9.2 mΩ at VGS = 10 V and 13 mΩ at VGS = 4.5 V. Total gate charge is 9.5 nC at VGS = 10 V. It operates within a junction temperature range of -55°C to +175°C and utilizes the LFPAK4 package.

Single FETs, MOSFETs Feature Summary

  • LFPAK4 package provides a small footprint for compact design
  • Low RDS(on) minimizes conduction losses
  • Low QG and capacitance reduce driver losses

Single FETs, MOSFETs Applications

  • Power management systems
  • DC-DC converters
  • Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the complete part number including the TWG suffix, which indicates tape and reel packaging with 3000 units per reel. Confirm RoHS compliance and Pb-free status as specified in the ordering information. Ensure the application environment supports the thermal characteristics defined in the datasheet for steady-state and pulsed operations.

Single FETs, MOSFETs Selection Notes

Select this component when a low-profile N-channel MOSFET with high current capability is required. The LFPAK4 package offers industry-standard compatibility. Evaluate thermal resistance values based on specific PCB copper pad sizes and ambient conditions. Verify that the gate drive voltage meets the requirements for optimal RDS(on) performance.

Single FETs, MOSFETs Part Context

This device belongs to the NVMYS series of power MOSFETs from onsemi. It is designed for general-purpose switching applications requiring efficient power handling in a compact surface-mount form factor. The product is compliant with RoHS standards and is lead-free.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other onsemi N-channel MOSFETs in the LFPAK4 package offering similar 60 V ratings and comparable RDS(on) specifications. Verify pinout compatibility and thermal performance before substitution.

Single FETs, MOSFETs FAQ

What is the maximum continuous drain current at case temperature of 25°C?

The maximum continuous drain current is 50 A when the case temperature is maintained at 25°C.

What is the total gate charge at VGS = 10 V?

The total gate charge is typically 9.5 nC when tested at VGS = 10 V, VDS = 48 V, and ID = 25 A.

NTMYS9D3N06CLTWGNTMYS9D3N06CLTWG
$2.29
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