NTND31015NZTAG

Overview

The NTND31015NZTAG is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in an XLLGA-6 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 20 V and supports a continuous drain current (Id) of 200 mA. Its typical on-resistance (Rds On) is 800 mOhms, with a gate-source threshold voltage (Vgs th) of 1 V. The maximum gate-source voltage range spans from -8 V to +8 V. Power dissipation is rated at 166 mW. Operating temperatures extend from -55 C to +150 C. Switching characteristics include a rise time of 25.5 ns and a fall time of 80 ns.

Feature Summary

• Dual configuration integrating two independent N-channel enhancement mode transistors within a single compact package.
• Utilizes silicon-based semiconductor technology optimized for low-voltage switching applications.
• Designed for surface-mount installation using the XLLGA-6 footprint to support space-constrained circuit layouts.

Applications

• Low-voltage signal switching circuits
• Battery protection modules
• Portable electronic device power management

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status via the provided datasheet documentation. Ensure the ordering suffix matches the required reel or cut tape packaging specifications. Cross-reference the part number against the latest onsemi product change notices to validate manufacturing status and availability constraints.

Selection Notes

Select this component when a dual N-channel configuration is required within a minimal footprint. The 20 V rating suits low-voltage logic interfaces. Evaluate thermal performance based on the 166 mW power dissipation limit. Compare switching speeds against system requirements, noting the specific rise and fall times documented in the electrical characteristics table.

Part Context

This part belongs to the NTND31015NZ series of small-signal MOSFETs produced by onsemi. It represents a dual-channel variant designed for integrated circuit applications requiring multiple switching elements in a reduced physical size. The XLLGA-6 package distinguishes it from standard SOT or SOIC alternatives.

Replacement Considerations

Consult official substitution guides for compatible dual N-channel MOSFETs with matching pinouts and electrical ratings. Verify package compatibility before implementation. No specific substitute part numbers are confirmed in public documentation.