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Product Detailed Parameters
- Description：MOSFET P-CH
- Series：*
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The NTND31200PZTAG is a dual P-channel small signal MOSFET manufactured by onsemi. This component integrates two independent P-channel enhancement-mode field-effect transistors within a single package, designed for low-voltage switching applications. The device utilizes advanced semiconductor processes to achieve low on-resistance and fast switching speeds, making it suitable for portable electronics and battery-powered systems where space efficiency and power management are critical. It operates with standard logic-level gate drive voltages.
Feature Summary
- Dual configuration integrating two independent P-channel MOSFETs in a compact footprint
- Optimized for low voltage switching applications in portable devices
- Designed for efficient power management in battery-operated systems
Applications
- Portable electronic devices requiring compact power switching solutions
- Battery protection circuits in mobile equipment
- Low-side or high-side load switching in consumer electronics
Procurement Notes
Verify the exact ordering suffix and tape-and-reel specifications against the official onsemi datasheet before procurement. Confirm that the package type matches the design requirements. Ensure the supplier provides genuine components with traceability documentation. Check for any specific handling or storage instructions outlined in the manufacturer's guidelines to maintain device integrity during assembly.
Selection Notes
Select this component when a dual P-channel configuration is required to save board space compared to discrete single MOSFETs. Consider the gate threshold voltage and on-resistance characteristics relative to the system's logic levels. Evaluate the thermal performance and package size constraints of the target application to ensure compatibility with the PCB layout and heat dissipation capabilities.
Part Context
This part belongs to onsemi's portfolio of small signal MOSFETs, which are widely used in consumer electronics and industrial control applications. The dual configuration allows for synchronized switching or redundant circuit designs within a minimal area. It complements other power management components in systems requiring efficient energy distribution and protection for sensitive loads.
Replacement Considerations
Consult onsemi's official cross-reference guides for verified equivalent parts. Ensure any substitute maintains the same dual P-channel topology, voltage ratings, and package dimensions. Verify that alternative components meet the same electrical performance criteria without requiring circuit redesign.
