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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 0.22A 6XLLGA
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Technology：-
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：220mA (Ta)
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：12.3pF @ 15V
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFLGA
- Supplier Device Package：6-XLLGA (.90x.65)
- Grade：-
- Qualification：-
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Overview
The NTND3184NZTAG is a dual N-channel enhancement mode MOSFET manufactured by onsemi. It is housed in an XLLGA-6 surface-mount package designed for low-power applications. The device features a drain-source breakdown voltage (Vds) of 20 V and a continuous drain current (Id) of 200 mA per channel. The typical on-resistance (Rds(on)) is specified at 800 mW, ensuring efficient switching performance. Operating within a temperature range of -55°C to +150°C, the component supports gate-source voltages up to ±8 V and dissipates up to 166 mW of power.
Feature Summary
- Dual independent N-channel configuration for compact circuit design
- Enhancement mode operation with low threshold voltage characteristics
- Surface-mount XLLGA-6 package optimized for space-constrained PCB layouts
Applications
- Portable consumer electronics battery protection circuits
- Low-side switching in mobile device power management systems
- Signal routing and isolation in compact communication modules
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm tape-and-reel packaging quantities and RoHS compliance status. Ensure that the procurement source provides valid traceability data matching the original equipment manufacturer's specifications for quality assurance purposes.
Selection Notes
Select this component when designing circuits requiring dual N-channel switching with a 20 V rating and minimal footprint. Evaluate thermal dissipation requirements against the 166 mW power limit and ensure the application current remains below the 200 mA continuous drain current specification for reliable long-term operation.
Part Context
This part belongs to the NTND31015NZ series family from onsemi, which focuses on small-signal dual MOSFET solutions. It shares similar electrical characteristics with other members like the NTND31015NZTAG but may differ in specific manufacturing lot details or minor parameter tolerances defined by the manufacturer's datasheet revisions.
Replacement Considerations
Direct substitutes include the NTND31015NZTAG, which shares identical pinout and core electrical ratings. Verify compatibility by comparing the on-resistance and package dimensions to ensure mechanical fit within the existing board layout constraints.
