NTQD6968NR2G

NTQD6968NR2G

$0.37
  • Description:MOSFET 2N-CH 20V 6.2A 8TSSOP
  • Series:-

SKU:53ccf28d8470 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 20V 6.2A 8TSSOP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:6.2A
  • Rds On (Max) @ Id, Vgs:22mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:17nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:630pF @ 16V
  • Power - Max:1.39W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

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NTQD6968NR2G

Overview

The NTQD6968NR2G is a dual N-channel enhancement mode Power MOSFET manufactured by onsemi. It features a 20V drain-source voltage rating and supports a continuous drain current of 7.0A. The device exhibits a maximum on-resistance of 15mΩ at a gate-source voltage of 4.5V. Packaged in an 8-pin TSSOP surface-mount configuration, it is designed for efficient power switching applications requiring low conduction losses.

Feature Summary

  • Dual N-Channel Configuration
  • Low On-Resistance
  • Surface Mount Packaging

Applications

  • Power Switching Circuits
  • DC-DC Converter Loads
  • Battery Protection Systems

Procurement Notes

Verify the complete part number including the suffix against official manufacturer documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status through the specific datasheet revision. Cross-reference with authorized distributors to validate authenticity and traceability before procurement.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage power management. Ensure the thermal design accommodates the package dissipation capabilities. Verify that the gate drive voltage meets the threshold requirements for optimal Rds(on) performance in the target application environment.

Part Context

This component belongs to the NTQD series of dual MOSFETs from onsemi. The series provides integrated dual-channel solutions in small outline packages. These devices are engineered for space-constrained designs requiring high current handling in low-voltage environments.

Replacement Considerations

Consult the official datasheet for electrically equivalent alternatives within the same product family. Verify pin compatibility and thermal characteristics before substituting with other dual N-channel MOSFETs.

NTQD6968NR2GNTQD6968NR2G
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