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The NTQD6968NR2G is a dual N-channel enhancement mode Power MOSFET manufactured by onsemi. It features a 20V drain-source voltage rating and supports a continuous drain current of 7.0A. The device exhibits a maximum on-resistance of 15mΩ at a gate-source voltage of 4.5V. Packaged in an 8-pin TSSOP surface-mount configuration, it is designed for efficient power switching applications requiring low conduction losses.
Verify the complete part number including the suffix against official manufacturer documentation to ensure correct packaging and tape specifications. Confirm RoHS compliance status through the specific datasheet revision. Cross-reference with authorized distributors to validate authenticity and traceability before procurement.
Select this component when a compact dual N-channel solution is required for low-voltage power management. Ensure the thermal design accommodates the package dissipation capabilities. Verify that the gate drive voltage meets the threshold requirements for optimal Rds(on) performance in the target application environment.
This component belongs to the NTQD series of dual MOSFETs from onsemi. The series provides integrated dual-channel solutions in small outline packages. These devices are engineered for space-constrained designs requiring high current handling in low-voltage environments.
Consult the official datasheet for electrically equivalent alternatives within the same product family. Verify pin compatibility and thermal characteristics before substituting with other dual N-channel MOSFETs.