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Product Detailed Parameters
- Description：MOSFET N/P-CH 100V 3.5A 8WDFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)
- Rds On (Max) @ Id, Vgs：70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 24µA, 4V @ 40µA
- Gate Charge (Qg) (Max) @ Vgs：5.6nC @ 10V, 7.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：252pF @ 50V, 256pF @ 50V
- Power - Max：1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-WDFN (3x3)
- Grade：-
- Qualification：-
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Overview
The onsemi NTTBC070NP10M5L is a dual N-channel MOSFET array housed in an 8-PowerWDFN package. It features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 3.5A at 25°C, rising to 9.5A at ambient conditions. The device utilizes PowerTrench technology for optimized performance in compact power management applications requiring efficient switching capabilities.
Feature Summary
- Dual N-channel configuration within a single compact package
- PowerTrench technology for enhanced switching efficiency
- Low on-resistance characteristics for reduced conduction losses
Applications
- DC-DC converter circuits
- Motor control systems
- Power distribution modules
Procurement Notes
Verify the specific suffix M5L against official onsemi documentation to confirm tape-and-reel specifications and lot traceability requirements. Ensure the procurement channel provides valid RoHS3 compliance certificates as indicated by manufacturer data. Cross-reference the 8-PowerWDFN footprint with PCB design guidelines to prevent assembly errors during component sourcing.
Selection Notes
Select this component when a dual N-channel solution is required for space-constrained designs operating at 100V. Evaluate thermal dissipation needs based on the 3.5A/9.5A current ratings relative to the PowerWDFN package's thermal resistance. Confirm that the gate charge parameters align with the driving circuit's speed requirements for the intended switching frequency.
Part Context
This part belongs to onsemi's PowerTrench MOSFET family, designed for high-efficiency power switching. The dual-array format integrates two independent N-channel devices into one footprint, simplifying board layout compared to discrete components. It targets applications needing moderate current handling with low profile packaging constraints.
Replacement Considerations
Consult onsemi's official cross-reference tools for verified substitutes. Ensure any replacement maintains the 100V Vdss rating and compatible 8-PowerWDFN pinout. Verify that alternative dual N-channel MOSFETs meet or exceed the 3.5A continuous current specification without compromising thermal performance.
