ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
NTTFD018N08LC is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 80V 6A 12WQFN. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for NTTFD018N08LC
- Description：MOSFET 2N-CH 80V 6A 12WQFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：80V
- Current - Continuous Drain (Id) @ 25°C：6A (Ta), 26A (Tc)
- Rds On (Max) @ Id, Vgs：18mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 44µA
- Gate Charge (Qg) (Max) @ Vgs：12.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：856pF @ 40V
- Power - Max：1.7W (Ta), 26W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：12-PowerWQFN
- Supplier Device Package：12-WQFN (3.3x3.3)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for NTTFD018N08LC
FET, MOSFET Arrays Overview
The onsemi NTTFD018N08LC is a symmetric dual N-channel MOSFET integrating two specialized transistors within a single package. This configuration connects the switching nodes internally, facilitating synchronous buck converter layouts. The device features low on-resistance of 18 mΩ maximum at VGS=10V and ID=7.8A, and 29 mΩ maximum at VGS=4.5V and ID=6.2A. It utilizes a low-inductance package to minimize switching losses and complies with RoHS standards for environmental safety.
FET, MOSFET Arrays Feature Summary
- Integrates two N-channel MOSFETs in a dual package with internal connection of switching nodes
- Optimized control and synchronous MOSFETs for maximum power efficiency
- Low-inductance package design reduces rise/fall times and switching losses
FET, MOSFET Arrays Applications
- 48 V input primary half-bridge circuits
- Communication equipment power supplies
- General-purpose point-of-load applications
FET, MOSFET Arrays Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm datasheet revision status matches design requirements. Ensure storage conditions adhere to manufacturer specifications to maintain reliability. Check for specific ordering suffixes if variant selection is required.
FET, MOSFET Arrays Selection Notes
Select this component for synchronous buck converters requiring compact layout solutions. Evaluate thermal performance based on the specified on-resistance values at intended gate drive voltages. Consider the low-inductance package benefits for high-frequency switching operations.
FET, MOSFET Arrays Part Context
This symmetric dual MOSFET belongs to onsemi's PowerTrench series, designed for efficient power conversion. It addresses the need for reduced PCB area and improved thermal management in modern electronic systems by combining two optimized transistors into one footprint.
FET, MOSFET Arrays Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing. Ensure any substitute part meets the same RoHS compliance and packaging requirements.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
