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Product Detailed Parameters
- Description：MOSFET, POWER, 25V DUAL N-CHANNE
- Series：PowerTrench®
- Mfr：onsemi
- Package：Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Asymmetrical
- FET Feature：-
- Drain to Source Voltage (Vdss)：25V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 21A (Ta)
- Rds On (Max) @ Id, Vgs：4.2mOhm @ 15A, 10V, 1.4mOhm @ 29A, 10V
- Vgs(th) (Max) @ Id：2V @ 190µA, 2V @ 310µA
- Gate Charge (Qg) (Max) @ Vgs：5.5nC @ 4.5V, 17nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：873pF @ 15V, 2700pF @ 15V
- Power - Max：800mW (Ta), 900mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerWDFN
- Supplier Device Package：8-PQFN (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The onsemi NTTFD1D8N02P1E is a dual N-channel PowerTrench MOSFET featuring asymmetric configuration within a compact 3.3mm x 3.3mm PQFN12 surface-mount package. It integrates high-side and low-side devices optimized for synchronous rectification, offering a maximum drain-source voltage of 25V. The high-side channel exhibits an RDS(on) of 4.2mΩ with a continuous current capacity of 61A, while the low-side channel provides 1.4mΩ RDS(on) and supports up to 126A. Designed for high-efficiency power conversion, it incorporates low gate charge and capacitance to minimize switching losses.
Feature Summary
- Asymmetric dual N-channel architecture enables optimized performance for high-side and low-side roles in synchronous applications
- PowerClip technology ensures robust thermal dissipation and reliable operation under high current loads
- Low parasitic capacitance and gate charge facilitate faster switching speeds and reduced driver power consumption
Applications
- DC/DC converters
- System voltage rails
- Load point (POL) converters
Procurement Notes
Verify component authenticity by cross-referencing the part number against official onsemi documentation. Confirm that the physical marking matches the datasheet specifications. Ensure the device meets RoHS compliance requirements for environmental standards. Check package integrity upon receipt to prevent damage to the delicate lead frame structure.
Selection Notes
Select this component when space constraints require a 3.3mm x 3.3mm footprint for dual-channel integration. Choose this asymmetric design for applications requiring distinct current handling capabilities between high-side and low-side switches. Evaluate thermal management needs based on the specified power dissipation ratings for both channels under operating conditions.
Part Context
This device belongs to the PowerTrench family of MOSFETs from onsemi, engineered for high-density power electronics. The specific model utilizes PowerClip packaging to enhance thermal conductivity compared to traditional leaded packages. It serves as a specialized solution for integrated half-bridge configurations where board area is limited.
Replacement Considerations
Direct substitutes must match the 25V rating, dual N-channel configuration, and 3.3mm x 3.3mm PQFN12 package dimensions. Verify equivalent RDS(on) values and pinout compatibility before implementation.
