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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 16.1A 12WQFN
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：16.1A (Ta), 80A (Tc)
- Rds On (Max) @ Id, Vgs：2.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id：3V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs：20.8nC @ 10V, 20.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1500pF @ 15V, 1521pF @ 15V
- Power - Max：1.04W (Ta), 26W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：12-PowerWQFN
- Supplier Device Package：12-WQFN (3.3x3.3)
- Grade：-
- Qualification：-
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Overview
The NTTFD2D8N03P1E is a symmetric dual N-channel Power MOSFET from onsemi, utilizing PowerTrench and Power Clip technologies. It features a compact WQFN12 (3.3mm x 3.3mm) package. Key electrical parameters include a drain-to-source voltage of 30V and a maximum continuous drain current of 80A at TC = 25°C. The device offers low on-resistance, with RDS(on) max values of 2.5mΩ at VGS = 10V and 3.0mΩ at VGS = 4.5V. Total gate charge is typically 9.5nC at VGS = 4.5V and 20.8nC at VGS = 10V. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Symmetric dual configuration for balanced switching performance
- Power Clip technology for enhanced thermal dissipation and low inductance
- Small footprint design suitable for space-constrained PCB layouts
- RoHS compliant and lead-free construction
Applications
- DC-DC Converters
- System Voltage Rails
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging specifications. Confirm that the component meets all relevant environmental compliance standards required by the target market. Review the datasheet for accurate tape and reel dimensions before integrating into automated assembly lines.
Selection Notes
Evaluate the thermal resistance characteristics relative to the intended PCB copper pad size and layout. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(on) performance. Consider the pulsed drain current capabilities when designing for transient load conditions or avalanche energy scenarios.
Part Context
This component belongs to onsemi's PowerTrench family of N-channel MOSFETs. It is designed for high-efficiency power switching applications where low conduction losses and fast switching speeds are critical. The symmetric dual structure allows for efficient half-bridge or synchronous rectifier configurations.
Replacement Considerations
Direct substitutes must match the 30V rating, dual N-channel configuration, and WQFN12 package dimensions. Verify equivalent RDS(on) and QG values to maintain circuit efficiency. Check pinout compatibility to ensure seamless integration without PCB redesign.
FAQ
What is the maximum continuous drain current at case temperature of 25°C?
The maximum continuous drain current is 80A for both Q1 and Q2 at TC = 25°C.
Does this device support unclamped inductive switching (UIS)?
Yes, the device is 100% UIS tested. Q1 can handle 55.4 mJ and Q2 can handle 58.8 mJ of single pulse avalanche energy.
What is the typical total gate charge at VGS = 4.5V?
The typical total gate charge is 9.5nC for Q1 and 9.3nC for Q2 under standard test conditions.
