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NTTFD4D1N03P1E is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 30V 12A 12WQFN. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for NTTFD4D1N03P1E
- Description：MOSFET 2N-CH 30V 12A 12WQFN
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：12A (Ta), 54A (Tc)
- Rds On (Max) @ Id, Vgs：4.3mOhm @ 10A, 10V, 3.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V, 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1103pF @ 15V, 972pF @ 15V
- Power - Max：1W (Ta), 20W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：12-PowerWQFN
- Supplier Device Package：12-WQFN (3.3x3.3)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for NTTFD4D1N03P1E
FET, MOSFET Arrays Overview
The onsemi NTTFD4D1N03P1E is a dual N-channel PowerTrench MOSFET housed in a compact 3.3mm x 3.3mm Power Clip package. It integrates two optimized N-channel devices with an internal connection at the switching node, facilitating synchronous buck converter layouts. The component features low on-resistance and low gate charge to minimize conduction and switching losses. Designed for high-efficiency power management, it supports applications requiring small form factors and robust thermal performance while adhering to RoHS standards.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration with integrated switching node for simplified synchronous rectifier design
- Compact 3.3mm x 3.3mm Power Clip package enabling dense PCB layout
- Low on-resistance and gate charge characteristics for enhanced efficiency
- Lead-free construction compliant with RoHS directives
FET, MOSFET Arrays Applications
- DC-DC converters
- System voltage rails
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision and electrical parameters against the official onsemi documentation before integration. Confirm that the 3.3mm x 3.3mm Power Clip package dimensions align with your PCB footprint requirements. Ensure thermal management strategies account for the device's power dissipation limits under your specific operating conditions.
FET, MOSFET Arrays Selection Notes
Select this component when space-constrained designs require efficient synchronous rectification. The integrated switching node simplifies board routing compared to discrete solutions. Evaluate the trade-off between the compact package size and thermal performance relative to your system's heat dissipation capabilities and current load requirements.
FET, MOSFET Arrays Part Context
This device belongs to onsemi's PowerTrench family of MOSFETs, which are engineered for high-performance power switching applications. The Power Clip packaging technology provides superior thermal conductivity and electrical performance compared to traditional packages, supporting the industry trend toward miniaturization and higher power density in electronic systems.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference data for verified substitutes. Ensure any replacement maintains compatible pinout, voltage ratings, and thermal characteristics.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
