NTTFS012N10MD

Single FETs, MOSFETs Overview

The NTTFS012N10MD is a single N-channel power MOSFET from onsemi, utilizing Shielded Gate Technology. It features a 100 V drain-to-source breakdown voltage and a maximum continuous drain current of 45 A at 25°C case temperature. The device achieves a low on-resistance of 14.4 mΩ at VGS = 10 V and 21.0 mΩ at VGS = 6 V. Key electrical characteristics include a total gate charge of 8 nC at VGS = 6 V and a soft recovery body diode with a reverse recovery time of 20 ns at dI/dt = 1000 A/μs.

Single FETs, MOSFETs Feature Summary

• Shielded Gate MOSFET technology designed to minimize conduction losses through low RDS(on) and reduce driver losses via low gate charge and capacitance.
• Soft recovery body diode characterized by low reverse recovery charge (QRR) and output charge (QOSS), enhancing efficiency in light load conditions and reducing switching noise.

Single FETs, MOSFETs Applications

• Primary switch in isolated DC-DC converters
• Synchronous rectification in DC-DC and AC-DC circuits
• USB PD adapter synchronous rectification
• Load switch, hotswap, and ORing switch applications
• BLDC motor drives and solar inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'WDFN8' matches the required surface-mount package configuration for your PCB layout. Confirm that the component is Pb-Free, Halogen Free, BFR Free, and Beryllium Free to ensure compliance with RoHS standards. Validate that the thermal resistance parameters align with your system's heat dissipation requirements under steady-state conditions.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 100 V rating with high current handling capabilities up to 45 A. Consider its low gate charge for driving efficiency in high-frequency switching applications. Evaluate the thermal performance based on the junction-to-case resistance of 2.0 °C/W and ensure adequate copper pad sizing for optimal heat dissipation in the final assembly.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's portfolio of N-channel power MOSFETs optimized for general-purpose switching applications. It utilizes advanced Shielded Gate Technology to achieve superior performance metrics compared to standard trench MOSFETs. The device is housed in a WDFN8 package, providing a compact footprint suitable for space-constrained designs in modern electronic systems.

Single FETs, MOSFETs Replacement Considerations

Consult official onsemi documentation for verified substitute part numbers within the same product family or equivalent specifications. Ensure any replacement maintains compatibility with the WDFN8 package dimensions and pinout configuration to avoid redesigning the printed circuit board.

Single FETs, MOSFETs FAQ

What is the typical reverse recovery time of the body diode?

The typical reverse recovery time (tRR) is 20 ns when tested at a source current of 7.5 A and a rate of change of current (dIs/dt) of 1000 A/μs.

How does the on-resistance vary with gate voltage?

The drain-to-source on-resistance (RDS(on)) is specified as 14.4 mΩ maximum at a gate-to-source voltage of 10 V, and increases to 21.0 mΩ maximum at a gate-to-source voltage of 6 V.