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Product Detailed Parameters
- Description：MOSFET 40V U8FL
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The NTTFS5C471NLTAG is a single N-channel enhancement mode power MOSFET manufactured by onsemi. It features a 40V drain-source breakdown voltage and a maximum continuous drain current of 41A at case temperature of 25°C. The device exhibits a low on-resistance of 7.4 milliohms, ensuring efficient power handling with minimal conduction losses. It operates within a junction temperature range of -55°C to +175°C and includes AEC-Q101 automotive qualification. Packaged in an 8-WDFN surface-mount format, it supports high thermal performance for compact electronic designs.
Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- Low on-resistance design minimizes conduction losses
- Compact WDFN-8 package facilitates space-constrained layouts
Applications
- Automotive power distribution systems
- DC-DC converter circuits
- Motor control applications
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact packaging configurations such as reel or cut tape options. Ensure compliance with RoHS directives and REACH SVHC requirements prior to integration into final assemblies. Cross-reference datasheet revisions to validate parameter consistency for production planning.
Selection Notes
Evaluate thermal management requirements based on the specified power dissipation limits at various case temperatures. Confirm that gate drive voltages remain within the ±20V absolute maximum rating to prevent dielectric breakdown. Assess switching speed characteristics relative to system frequency requirements to optimize efficiency and minimize electromagnetic interference during operation.
Part Context
This component belongs to the NVTFS5C series of low-voltage power MOSFETs designed for high-efficiency switching applications. The series emphasizes reduced footprint and enhanced thermal conductivity through advanced silicon technology. It serves as a specialized solution for modern electronics requiring robust performance in limited physical spaces.
Replacement Considerations
Direct substitutes include other N-channel MOSFETs from the same family with identical pinouts and comparable electrical ratings. Verify that alternative parts meet the same AEC-Q101 qualification standards if automotive usage is intended. Ensure thermal resistance values are compatible with existing heat sinking solutions.
