SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The NTTFS5C478NLTAG is a single N-channel enhancement mode power MOSFET manufactured by onsemi. It utilizes silicon technology and is housed in a WDFN-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 40 V and a continuous drain current (Id) of 26 A. Its maximum gate-source voltage (Vgs) is rated at ±20 V. Key electrical parameters include a typical on-resistance (Rds(on)) of 11.5 mΩ, a gate charge (Qg) of 3.8 nC, and a threshold voltage (Vgs(th)) of 1.2 V. The component supports an operating temperature range from -55 °C to +175 °C with a power dissipation rating of 20 W.
Verify the exact part number against official manufacturer documentation before procurement. Confirm that the suffix 'TAG' corresponds to the specific tape and reel packaging configuration required for your assembly line. Ensure compliance with RoHS and REACH directives as specified in the latest datasheet.
Select this component when a low-voltage, high-current single N-channel MOSFET is required for space-constrained designs. The WDFN-8 package offers a compact footprint suitable for dense PCB layouts. Consider the 11.5 mΩ on-resistance for efficiency requirements and verify thermal management capabilities for the intended operating environment.
This component belongs to the NVTFS5C478NL series of low-voltage power MOSFETs. It shares similar electrical characteristics with other members of the family but differs in packaging and specific parameter tolerances. The series is designed for applications requiring robust performance in automotive and industrial environments.
Direct replacements may include parts from the same NVTFS5C478NL series with compatible pinouts and electrical ratings. Verify package dimensions and thermal resistance values to ensure mechanical and thermal compatibility during substitution.