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NTTFS6H860NLTAG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 80V 8.1A/30A 8WDFN. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for NTTFS6H860NLTAG
- Description：MOSFET N-CH 80V 8.1A/30A 8WDFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：8.1A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：2V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：610 pF @ 40 V
- FET Feature：-
- Power Dissipation (Max)：3.1W (Ta), 42W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-WDFN (3.3x3.3)
- Package / Case：8-PowerWDFN
Single FETs, MOSFETs datasheet and documents for NTTFS6H860NLTAG
Single FETs, MOSFETs Overview
The NTTFS6H860NLTAG is a single N-channel enhancement mode MOSFET manufactured by onsemi. It features an 80 V drain-source breakdown voltage and a continuous drain current of 30 A at case temperature of 25°C. The device exhibits a maximum on-resistance of 20 mΩ at a gate-source voltage of 10 V. It utilizes a WDFN-8 surface-mount package with a thermal dissipation rating of 42 W. The component operates within a junction temperature range of -55°C to +175°C and includes a gate-source voltage limit of ±20 V.
Single FETs, MOSFETs Feature Summary
- Compact WDFN-8 footprint designed for high-density PCB layouts
- Low on-resistance minimizes conduction losses in power paths
- Enhanced switching performance through optimized gate charge characteristics
Single FETs, MOSFETs Applications
- DC-DC converter output stages
- Motor control circuits
- Power management modules
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against the manufacturer datasheet to confirm package type and reel specifications. Ensure the procurement channel provides valid RoHS compliance documentation. Cross-reference the part number with official distributor catalogs to validate authenticity before finalizing orders.
Single FETs, MOSFETs Selection Notes
Evaluate the thermal resistance requirements based on the intended PCB copper area, as heat dissipation relies heavily on the WDFN-8 pad design. Confirm that the driving circuit can supply sufficient gate voltage to achieve the specified low on-resistance threshold without exceeding the maximum gate-source limits.
Single FETs, MOSFETs Part Context
This component belongs to the NTTFS6H860NL series of low-voltage power MOSFETs. It represents a silicon-based solution optimized for efficiency in compact form factors. The series targets applications requiring robust switching capabilities within strict spatial constraints.
Single FETs, MOSFETs Replacement Considerations
Consult the official datasheet for direct pin-compatible alternatives within the same product family. Verify that any substitute maintains identical voltage ratings and package dimensions to ensure seamless integration.
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