NTUD3169CZT5G

Overview

The NTUD3169CZT5G is an N/P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 20 V and operates within a temperature range of -55 °C to +150 °C. The device utilizes a SOT-963 surface-mount package with six pins, measuring 1.05 mm in length, 0.85 mm in width, and 0.4 mm in height. Electrical characteristics include a maximum continuous drain current of 250 mA for the N-channel and 280 mA for the P-channel. The maximum gate-source voltage is rated at ±8 V, with a maximum gate threshold voltage of 1 V. Power dissipation is limited to 200 mW, and the unit contains two isolated silicon chips.

Feature Summary

• Dual-channel configuration integrating both N-channel and P-channel enhancement mode transistors within a single compact package.
• Surface-mount construction utilizing the SOT-963 footprint designed for automated assembly processes.
• High-temperature operational capability supporting environments up to +150 °C.

Applications

• Battery protection circuits requiring dual-polarity switching
• Low-voltage signal routing in portable electronic devices
• Power management modules in space-constrained consumer electronics

Procurement Notes

Verify the component authenticity by checking the manufacturer marking against official datasheet specifications. Confirm the specific suffix matches the required electrical tolerances and packaging format. Ensure the supplier provides traceable documentation linking to the original production batch. Cross-reference the part number with authorized distributor catalogs to validate availability status. Request material compliance certificates if regulatory adherence is mandatory for the final assembly.

Selection Notes

Select this component when a dual MOSFET solution is required in a minimal footprint application. The 20 V rating suits low-voltage systems where higher breakdown voltages are unnecessary. Evaluate the thermal constraints carefully as the power dissipation limit is 200 mW. Compare the on-resistance values against circuit requirements to ensure efficient switching performance. Consider the SOT-963 package dimensions during PCB layout to maintain adequate clearance.

Part Context

This part belongs to the onsemi lineup of small-signal MOSFETs designed for general-purpose switching applications. The SOT-963 package represents a specialized form factor distinct from standard SOT-23 or SC-70 variants. It integrates two independent channels to reduce board space compared to discrete single-transistor implementations. The technology focuses on balancing leakage current and conduction losses for battery-powered devices.

Replacement Considerations

Direct substitutes must match the 20 V rating, SOT-963-6 package, and complementary N/P channel configuration. Verify that alternative parts meet the same current and thermal specifications. Check pinout compatibility to ensure seamless integration without PCB redesign. Confirm that the replacement maintains equivalent switching speeds and threshold voltages.