NTZD3154NT1G

Overview

The NTZD3154NT1G is a dual N-channel small signal MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 540 mA at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 1.5 Ω at Vgs = 4.5 V and Id = 100 mA. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 125 mW. The component is housed in an SOT-963 surface-mount package.

Feature Summary

• Dual N-channel configuration for space-efficient circuit design
• Low voltage operation suitable for portable applications
• Surface-mount packaging for automated assembly

Applications

• Battery-powered consumer electronics
• Portable computing devices
• Signal switching circuits

Procurement Notes

Verify the specific ordering suffix against official onsemi documentation to confirm package type and tape-and-reel specifications. Ensure the procurement channel provides valid manufacturer traceability. Confirm RoHS compliance status through the latest product compliance declaration before finalizing orders.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage signal paths. Compare Rds(on) and capacitance values against alternative SOT-963 devices to ensure compatibility with existing drive levels and switching speed requirements in the target application.

Part Context

This part belongs to onsemi's portfolio of small-signal MOSFET arrays designed for high-density PCB layouts. It serves as a functional alternative to single-channel transistors where multiple switches are needed in a minimal footprint, supporting modern miniaturization trends in electronic hardware.

Replacement Considerations

Cross-reference with other SOT-963 dual N-channel MOSFETs from onsemi or other manufacturers. Verify pinout compatibility and electrical parameter equivalence, specifically Vdss, Id, and Rds(on), before substituting.