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The NTZD3155CT1G is an N/P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 20 V and operates in a surface-mount SOT-563 package with six pins. The device contains two isolated transistors, delivering a maximum continuous drain current of 450 mA for the N-channel and 570 mA for the P-channel. Key electrical parameters include a maximum drain-source resistance of 2 Ω for the N-channel and 900 mΩ for the P-channel. The component utilizes silicon technology, supports a maximum power dissipation of 280 mW, and functions within a temperature range of -55 °C to +150 °C.
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging format and compliance status. Ensure the requested part number matches the exact electrical specifications required for the target circuit design. Cross-reference the manufacturer's latest datasheet to validate pinout configurations and thermal characteristics before finalizing procurement orders.
Select this component when a dual N/P-channel solution is required in a minimal footprint. Verify that the 20 V drain-source voltage rating exceeds the maximum operating voltage of the application. Confirm that the 450 mA and 570 mA current ratings meet the load requirements for the respective channels. Check that the SOT-563 package dimensions fit the available board space constraints.
This component belongs to the family of dual MOSFETs offered by onsemi, designed for efficient power management in small form factors. It serves as a discrete alternative to integrated power switches, providing flexibility in circuit design. The SOT-563 package is commonly used in portable electronics where space efficiency is critical.
The NTZD3155CT5H is a documented variant from the same manufacturer. Verify if the packaging suffix change affects mechanical compatibility or supply chain availability. No other public substitute part numbers are confirmed in the provided data.