NTZD3155CT1G

NTZD3155CT1G

$0.45
  • Description:MOSFET N/P-CH 20V 0.54A SOT563
  • Series:-

SKU:f991b67dd5da Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET N/P-CH 20V 0.54A SOT563
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):20V
  • Current - Continuous Drain (Id) @ 25°C:540mA, 430mA
  • Rds On (Max) @ Id, Vgs:550mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:2.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:150pF @ 16V
  • Power - Max:250mW
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-563, SOT-666
  • Supplier Device Package:SOT-563
  • Grade:-
  • Qualification:-

Download product information

NTZD3155CT1G

Overview

The NTZD3155CT1G is an N/P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 20 V and operates in a surface-mount SOT-563 package with six pins. The device contains two isolated transistors, delivering a maximum continuous drain current of 450 mA for the N-channel and 570 mA for the P-channel. Key electrical parameters include a maximum drain-source resistance of 2 Ω for the N-channel and 900 mΩ for the P-channel. The component utilizes silicon technology, supports a maximum power dissipation of 280 mW, and functions within a temperature range of -55 °C to +150 °C.

Feature Summary

  • Dual configuration integrating both N-channel and P-channel enhancement mode MOSFETs into a single compact package.
  • Isolated transistor architecture allows independent control of each channel within the shared footprint.
  • Surface-mount design optimized for automated assembly processes in space-constrained applications.

Applications

  • Portable electronic devices requiring low-voltage switching capabilities
  • Battery-powered systems utilizing single-cell lithium-ion or multi-cell alkaline power sources
  • General-purpose signal switching in consumer electronics

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging format and compliance status. Ensure the requested part number matches the exact electrical specifications required for the target circuit design. Cross-reference the manufacturer's latest datasheet to validate pinout configurations and thermal characteristics before finalizing procurement orders.

Selection Notes

Select this component when a dual N/P-channel solution is required in a minimal footprint. Verify that the 20 V drain-source voltage rating exceeds the maximum operating voltage of the application. Confirm that the 450 mA and 570 mA current ratings meet the load requirements for the respective channels. Check that the SOT-563 package dimensions fit the available board space constraints.

Part Context

This component belongs to the family of dual MOSFETs offered by onsemi, designed for efficient power management in small form factors. It serves as a discrete alternative to integrated power switches, providing flexibility in circuit design. The SOT-563 package is commonly used in portable electronics where space efficiency is critical.

Replacement Considerations

The NTZD3155CT5H is a documented variant from the same manufacturer. Verify if the packaging suffix change affects mechanical compatibility or supply chain availability. No other public substitute part numbers are confirmed in the provided data.

NTZD3155CT1GNTZD3155CT1G
$0.45
Buy Now