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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.54A SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：540mA, 430mA
- Rds On (Max) @ Id, Vgs：550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：150pF @ 16V
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The NTZD3155CT2G is a dual N/P-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 20 V and continuous drain currents of 450 mA for the N-channel and 570 mA for the P-channel. The device utilizes an SOT-563 surface-mount package with six pins. Key electrical parameters include a maximum on-resistance of 2 Ω for the N-channel and 900 mΩ for the P-channel, with a typical gate charge of 0.1 nC at 4.5 V for the N-channel and 1.5 nC at 4.5 V for the P-channel. It operates within a temperature range of -55 °C to +150 °C.
Feature Summary
- Dual configuration integrating separate N-channel and P-channel enhancement mode transistors in a single compact package.
- Low on-resistance characteristics optimized for efficient power switching in low-voltage applications.
- RoHS compliant construction ensuring environmental safety standards are met.
Applications
- Battery protection circuits requiring integrated switching capabilities.
- Power management modules in portable electronic devices.
- Load switching applications in consumer electronics.
Procurement Notes
Verify the specific suffix 'T2G' against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SOT-563 footprint dimensions during PCB layout. Confirm RoHS compliance status through current datasheets as manufacturing processes may evolve over time.
Selection Notes
Select this component when space-constrained designs require both N-type and P-type switching functions. Evaluate thermal performance based on the 280 mW power dissipation limit. Compare on-resistance values against system efficiency requirements to ensure adequate current handling for the intended load conditions.
Part Context
This part belongs to onsemi's portfolio of small-signal MOSFETs designed for general-purpose switching. It serves as a complementary pair solution, reducing component count compared to using discrete single transistors. The SOT-563 package allows for automated assembly in high-volume manufacturing environments.
Replacement Considerations
Publicly confirmed substitute part numbers for NTZD3155CT2G were not identified in the provided reference data. Verify pinout compatibility and electrical ratings before considering alternative manufacturers or series.
