NTZD3156CT1G

Overview

The NTZD3156CT1G is a dual N/P-channel enhancement mode MOSFET manufactured by onsemi, housed in a compact SOT-563 surface-mount package with six pins. The device integrates two isolated transistors within a single silicon component, featuring a maximum drain-source voltage of 20 V. It supports continuous drain currents of 450 mA for the N-channel and 570 mA for the P-channel. Key electrical characteristics include a maximum on-resistance of 2 Ω for the N-channel and 900 mΩ for the P-channel, with a typical gate charge of 0.1 nC at 4.5 V for the N-channel and 1.5 nC at 4.5 V for the P-channel. The unit operates reliably across a temperature range of -55 °C to +150 °C with a power dissipation rating of 280 mW.

Feature Summary

• Integrates both N-channel and P-channel enhancement mode MOSFETs into a single compact surface-mount package.

Applications

• Portable electronic devices requiring space-efficient switching solutions.

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging configuration and tape-and-reel specifications. Ensure that the requested part number matches the exact electrical ratings and pinout requirements for the target application design.

Selection Notes

Select this component when a dual N/P-channel configuration is required in a minimal footprint. Compare the 20 V breakdown voltage and current ratings against circuit demands. Verify thermal management capabilities given the 280 mW power dissipation limit in the SOT-563 package.

Part Context

This component belongs to the NTZD series of dual MOSFETs from onsemi, designed for low-voltage applications. It serves as an alternative to discrete transistor pairs, simplifying PCB layout and reducing assembly complexity in portable electronics.

Replacement Considerations

Consult official substitution guides for verified equivalents. Cross-reference parameters such as voltage, current, and package type before considering alternatives.