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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 0.54A SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：540mA, 430mA
- Rds On (Max) @ Id, Vgs：550mOhm @ 540mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：72pF @ 16V
- Power - Max：250mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The NTZD3156CT5G is a dual MOSFET component manufactured by onsemi, integrating one N-channel and one P-channel field-effect transistor within a single surface-mount package. The device utilizes silicon technology and features a compact SOT-563 (also designated as 463A) six-pin configuration. It is designed for small signal applications requiring complementary switching capabilities in a minimal footprint.
Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs into a single monolithic structure
- Utilizes a compact six-pin surface-mount package to minimize printed circuit board area
- Constructed with silicon technology suitable for general-purpose small signal switching
Applications
- Complementary switching circuits in portable electronic devices
- Low-side and high-side driver configurations in battery-powered systems
- Signal routing and logic level translation in compact consumer electronics
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm exact electrical characteristics and packaging specifications. Ensure that the procurement channel provides genuine components from authorized sources to maintain reliability and compliance with RoHS standards.
Selection Notes
Select this component when a design requires both N-channel and P-channel switching functionality within a constrained board space. Evaluate the voltage ratings and current handling capabilities against the specific application requirements to ensure adequate performance margins under operating conditions.
Part Context
This part belongs to the NTZD series of dual MOSFETs offered by onsemi. These components are engineered to replace discrete transistor pairs, offering improved consistency and reduced assembly complexity compared to using separate N-channel and P-channel devices in complementary configurations.
Replacement Considerations
Consult official substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering equivalent parts from other manufacturers to ensure functional compatibility.
