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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 0.43A SOT563
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：430mA
- Rds On (Max) @ Id, Vgs：900mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：175pF @ 16V
- Power - Max：250mW
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The NTZD3158PT1G is a dual P-channel small signal MOSFET manufactured by onsemi. It features a 20V drain-source voltage rating and a continuous drain current of 0.43A. The device utilizes a SOT-563 surface-mount package with six pins. Key electrical parameters include a maximum power dissipation of 250mW, an operating temperature range from -55°C to +150°C, and a gate-source breakdown voltage of ±6.0V. The component is designed for low-power switching applications requiring compact integration.
Feature Summary
- Dual P-channel configuration in a single compact package
- Low voltage operation suitable for portable electronics
- Surface-mount design optimized for automated assembly
Applications
- Battery protection circuits
- Load switches in mobile devices
- Power management units for consumer electronics
Procurement Notes
Verify the specific datasheet version and ordering suffix to ensure compliance with current manufacturing standards. Confirm that the SOT-563 package dimensions align with the target PCB footprint. Check for RoHS compliance status as required by regional regulations. Ensure storage conditions meet the manufacturer's recommendations for moisture sensitivity levels prior to reflow soldering processes.
Selection Notes
Select this component when a dual P-channel solution is required in a minimal footprint. Compare the 0.43A current rating against peak load requirements to prevent thermal overload. Evaluate the 20V voltage rating against the system supply rails. Consider the SOT-563 package size constraints relative to available board space compared to alternative single-channel or larger packages.
Part Context
This part belongs to the NTZD series of dual MOSFETs from onsemi. It serves as a compact alternative to discrete dual-transistor setups. The series is engineered for space-constrained applications in portable devices. It complements other small-signal transistors in power management and signal routing architectures.
Replacement Considerations
Cross-reference with NTZD3152PT1G for similar dual P-channel specifications. Verify pinout compatibility and electrical ratings before substitution. Consult official replacement lists for confirmed equivalents.
