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The NTZD5110NT5G is a dual N-channel MOSFET array rated for 60V drain-source voltage and 294mA continuous current. It features logic-level gate drive characteristics with a maximum on-resistance of 1.6 Ohms. The device operates within a temperature range of -55°C to +150°C and is housed in a compact SOT-563 surface-mount package measuring 0.85mm by 0.65mm.
Verify component availability as this part number is marked as discontinued in official documentation. Confirm end-of-life status with the manufacturer before finalizing design implementations. Explore alternative packages or updated series from onsemi to ensure long-term supply chain stability for production requirements.
Select this component for designs requiring dual N-channel MOSFETs in minimal footprint. Ensure gate drive voltages align with logic-level specifications. Verify that the 1.6 Ohm on-resistance meets power dissipation limits. Consider thermal management strategies given the small SOT-563 package size and high junction temperature rating.
This device belongs to the NTZD5110N series, representing a family of dual N-channel MOSFET arrays. These components are designed for portable electronics where board space is limited. The series emphasizes low on-resistance and fast switching speeds while maintaining compatibility with standard logic interfaces.
Consult onsemi for direct replacements or updated series equivalents. Verify pinout compatibility and electrical parameters when substituting. Check for available tape-and-reel packaging options if required for automated assembly processes.