NTZS3151PT1G

$0.33

Description：MOSFET P-CH 20V 860MA SOT563
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b289d68a5f95 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NTZS3151PT1G is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET P-CH 20V 860MA SOT563. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NTZS3151PT1G

Description：MOSFET P-CH 20V 860MA SOT563
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：860mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：150mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：5.6 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：458 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：170mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-563
Package / Case：SOT-563, SOT-666

Single FETs, MOSFETs datasheet and documents for NTZS3151PT1G

NTZS3151PT1G

Single FETs, MOSFETs Overview

The NTZS3151PT1G is a P-channel enhancement-mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage of 20 V and a continuous drain current of 950 mA. The device utilizes an SOT-563 surface-mount package with six pins, measuring 1.7 mm in length and 0.6 mm in height. Key electrical parameters include a maximum drain-source resistance of 240 mΩ, a typical gate charge of 5.6 nC at the specified gate-source voltage, and a forward voltage of -0.9 V. Power dissipation is rated at 210 mW, with an operating temperature range spanning from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Single-channel P-type configuration designed for surface-mount applications
Enhancement mode operation providing efficient switching capabilities
Compact SOT-563 packaging optimized for space-constrained circuit designs

Single FETs, MOSFETs Applications

Low-side power switching circuits
Battery protection modules
Portable electronic device power management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix 'T1G' to confirm tape-and-reel packaging quantities and ensure compatibility with automated assembly equipment. Confirm RoHS compliance status through official manufacturer documentation prior to integration into regulated products. Validate that the SOT-563 footprint matches the target PCB layout specifications exactly.

Single FETs, MOSFETs Selection Notes

Select this component when a single P-channel switch is required within a limited board area. The 20 V rating suits low-voltage systems, while the 950 mA current capacity supports moderate load requirements. Consider the 240 mΩ on-resistance for thermal management efficiency in compact enclosures where heat dissipation is restricted.

Single FETs, MOSFETs Part Context

This part belongs to the NTZS3151P series of P-channel MOSFETs from onsemi. It serves as a discrete semiconductor solution for power control tasks. The device complements other small-signal transistors in portable electronics, offering a balance between current handling capability and physical size constraints typical of modern consumer hardware.