NVBG040N120M3S

$14.39

Description：SILICON CARBIDE (SIC) MOSFET-ELI
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7cc9c3978064 Category: Single FETs, MOSFETs Brand: onsemi

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Product introduction

NVBG040N120M3S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is SILICON CARBIDE (SIC) MOSFET-ELI. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for NVBG040N120M3S

Description：SILICON CARBIDE (SIC) MOSFET-ELI
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)：1200 V
Current - Continuous Drain (Id) @ 25°C：57A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：18V
Rds On (Max) @ Id, Vgs：54mOhm @ 20A, 18V
Vgs(th) (Max) @ Id：4.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：75 nC @ 18 V
Vgs (Max)：+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds：1700 pF @ 800 V
FET Feature：-
Power Dissipation (Max)：263W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK-7
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Single FETs, MOSFETs datasheet and documents for NVBG040N120M3S

NVBG040N120M3S

Single FETs, MOSFETs Overview

The NVBG040N120M3S is a single N-channel Silicon Carbide (SiC) MOSFET from onsemi’s EliteSiC M3S planar series. It features a 1200 V drain-source breakdown voltage and a typical on-resistance of 40 mΩ at VGS = 18 V. The device supports a continuous drain current of 57 A at case temperature and handles up to 263 W power dissipation. Key electrical parameters include a total gate charge of approximately 75 nC and an output capacitance of 80 pF, enabling high-speed switching with low losses.

Single FETs, MOSFETs Feature Summary

Utilizes EliteSiC M3S planar technology for reliable operation with negative gate voltage drive.
Optimized for fast switching applications through ultra-low gate charge and low capacitance characteristics.
Designed for enhanced thermal performance and robustness in high-power density environments.

Single FETs, MOSFETs Applications

High-frequency DC-DC converters
Solar micro-inverters
Uninterruptible Power Supplies (UPS)
Battery management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official datasheets to confirm package type and testing requirements. Confirm RoHS compliance status directly with the manufacturer or authorized distributors. Ensure the ordering part number matches the required thermal and electrical specifications for your design.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses and fast switching speeds at 1200 V. Consider the D2PAK-7L package for surface-mount assembly constraints. Evaluate thermal management needs based on the 263 W power dissipation rating at case temperature.

Single FETs, MOSFETs Part Context

This device belongs to onsemi’s EliteSiC M3S portfolio, which integrates advanced planar SiC MOSFET technology. The series targets efficiency improvements in power conversion systems by reducing both conduction and switching losses compared to previous generations.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same EliteSiC family, such as NVBG022N120M3S for lower resistance or NVBG060N120M3S for higher current capacity, ensuring voltage ratings remain compatible.