NVD6416ANT4G

Single FETs, MOSFETs Overview

The NTD6416ANT4G is an N-channel Power MOSFET manufactured by onsemi, designed for surface-mount applications in the DPAK (TO-252) package. It features a drain-source voltage rating of 100 V and supports a continuous drain current of 17 A at case temperature. The device exhibits a maximum on-resistance of 81 mΩ at 10 V gate drive and 17 A. Key electrical characteristics include a gate charge of 20 nC at 10 V and an input capacitance of 620 pF at 25 V. It operates within a junction temperature range of -55°C to 175°C with a maximum power dissipation of 71 W.

Single FETs, MOSFETs Feature Summary

• N-channel enhancement mode MOSFET technology
• Low on-resistance for efficient power switching
• High thermal stability with wide operating temperature range

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Power management systems
• Motor control applications

Single FETs, MOSFETs Procurement Notes

Verify the exact part number against official manufacturer documentation to ensure correct component identification. Confirm that the ordering suffix matches the required packaging format. Check RoHS compliance status and material declarations prior to integration into designs. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component based on its 100 V voltage rating and 17 A current capacity suitable for medium-power switching tasks. Evaluate the 81 mΩ on-resistance for conduction loss calculations at the target operating current. Consider the DPAK package thermal performance and PCB layout constraints for heat dissipation. Verify gate drive compatibility with the 10 V threshold and charge requirements.

Single FETs, MOSFETs Part Context

This component belongs to the NTD6416AN series of N-channel MOSFETs from onsemi. It is part of the company's discrete semiconductor product line focused on power management solutions. The device utilizes metal-oxide-semiconductor field-effect transistor technology optimized for high-efficiency switching applications in industrial and consumer electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering equivalent parts from other manufacturers.