NVD6495NLT4G

Single FETs, MOSFETs Overview

The NVD6495NLT4G is an N-channel logic level power MOSFET manufactured by onsemi. It features a drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 25 A. The device exhibits a maximum on-resistance (Rds(on)) of 50 mΩ at a gate-source voltage (Vgs) of 10 V. It is housed in a DPAK (TO-252) surface-mount package with three pins. The component supports a maximum power dissipation of 83 W and operates within a temperature range up to 175°C.

Single FETs, MOSFETs Feature Summary

• Logic level gate drive capability for efficient control
• Low on-resistance for reduced conduction losses
• Robust thermal performance for high-power applications

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control systems
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and marking against official datasheets to ensure correct variant identification. Confirm RoHS compliance status and material composition declarations prior to integration. Check for obsolescence notices or lifecycle changes directly from the manufacturer. Ensure storage conditions meet semiconductor handling standards to prevent moisture sensitivity issues during assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a 100 V rating and 25 A current capacity are required in a compact surface-mount form factor. The logic level gate threshold simplifies driver design compared to standard threshold devices. Evaluate thermal resistance parameters against the target PCB copper area to ensure adequate heat dissipation for the intended duty cycle and ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to onsemi's NVD series of N-channel enhancement mode MOSFETs. These devices are designed for general-purpose switching applications requiring low on-resistance and robust reliability. The series utilizes advanced silicon technology to optimize the balance between conduction losses and switching performance, suitable for various industrial and consumer electronics power stages.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 100 V/25 A specification and TO-252 package. Verify pinout compatibility and electrical characteristics such as Rds(on) and Qg. Cross-reference with other manufacturers' equivalent parts ensuring identical thermal and electrical ratings for seamless integration.