NVJD4158CT1G

Overview

The NVJD4158CT1G is a discontinued complementary small-signal MOSFET from onsemi, housed in an SC-88 (SOT-363) package. It integrates one N-channel and one P-channel enhancement-mode transistor. The N-channel device supports a drain-to-source voltage of 30 V with a continuous drain current of 0.25 A at 25 °C. The P-channel device operates at -20 V with a continuous drain current of -0.88 A at 25 °C. Both transistors feature low on-resistance, with the N-channel reaching 1.0 Ω at 4.5 V gate drive and the P-channel reaching 0.215 Ω at -4.5 V gate drive. The component is designed for portable applications requiring ESD protection and occupies a minimal footprint.

Feature Summary

• Complementary N/P-channel configuration within a single compact surface-mount package
• Integrated electrostatic discharge (ESD) protection on the gate terminals
• Low on-resistance performance optimized for efficient power switching
• AEC-Q101 qualified and PPAP capable for automotive reliability standards

Applications

• DC-DC conversion circuits
• Load and power management systems
• Load switch implementations
• Portable electronics such as cell phones, MP3 players, digital cameras, and PDAs

Procurement Notes

Verify availability status carefully as this specific part number is listed as discontinued in official documentation. Confirm if the standard NTJD4158CT1G variant meets project requirements or if alternative sourcing strategies are necessary. Ensure all design-in decisions account for the end-of-life status to prevent future supply chain disruptions.

Selection Notes

Select this component only when its specific voltage ratings and current capabilities align with the circuit design. Consider the SC-88 package dimensions for board space constraints. Evaluate thermal dissipation requirements against the steady-state power rating. Verify that the discontinuation status does not conflict with long-term production lifecycle goals.

Part Context

This device belongs to the NTJD4158C family of complementary MOSFETs. The NV prefix indicates qualification for automotive applications requiring unique site and control change requirements. It serves as a compact solution for dual-channel switching needs in space-constrained consumer and industrial electronics.

Replacement Considerations

Consult onsemi representatives for current alternatives. The standard NTJD4158CT1G shares identical electrical characteristics but lacks the automotive-specific prefix. Other complementary MOSFETs in similar packages may require schematic adjustments due to differing pinouts or electrical parameters.

FAQ

Is the NVJD4158CT1G currently available for new orders?

No, the datasheet explicitly lists the NVJD4158CT1G as discontinued.

What is the maximum drain-to-source voltage for the N-channel transistor?

The maximum drain-to-source voltage for the N-channel device is 30 V.

Does this component meet automotive quality standards?

Yes, the NV prefix denotes that the device is AEC-Q101 qualified and PPAP capable.