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The NVLJD4007NZTBG is a silicon rectifier diode manufactured by onsemi. It features a maximum repetitive peak reverse voltage of 1000 V and an average forward rectified current of 1 A. The device exhibits a maximum DC reverse leakage current of 5 µA at rated voltage and a typical forward voltage drop of 1.1 V at 1 A. It is housed in a compact SMA (DO-214AC) surface-mount package, designed for general-purpose power applications requiring high reliability and low leakage characteristics.
Verify the complete part number including the suffix 'BG' to ensure compliance with specific packaging and lead-free requirements. Confirm the manufacturer is onsemi or an authorized licensee. Check datasheet revisions for any updates to mechanical dimensions or electrical limits before finalizing procurement specifications.
Select this component when a 1000 V blocking voltage and 1 A continuous current rating are required in a surface-mount form factor. Ensure the application's thermal environment supports the SMA package's dissipation capabilities. Compare forward voltage and reverse leakage specifications against alternative SMA rectifiers if space or efficiency constraints are critical.
This part belongs to the standard 1N400x series of silicon rectifiers adapted for surface mount technology. It serves as the SMA equivalent to the through-hole DO-41 packaged 1N4007, maintaining identical electrical performance while enabling automated assembly processes for modern printed circuit board designs.
Direct functional equivalents include other SMA-packaged 1000V 1A rectifiers such as the MBRJ4007 or generic 1N4007-SMA variants. Verify pinout compatibility and thermal resistance values when substituting with parts from different manufacturers.