NVMD4N03R2G

Overview

The NVMD4N03R2G is a dual N-channel power MOSFET manufactured by onsemi, housed in an SO-8 surface-mount package. It features a drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of 4.0 A at 25 °C. The device exhibits ultra-low on-resistance, with typical values of 0.048 Ω at VGS = 10 V and 0.065 Ω at VGS = 4.5 V. It supports a single-pulse avalanche energy (EAS) of 80 mJ and operates within a junction temperature range of -55 °C to +150 °C. The component is Pb-Free, RoHS compliant, and qualified under AEC-Q101 standards.

Feature Summary

• Dual N-channel configuration integrated into a miniature SO-8 surface mount package for board space efficiency.
• Ultra-low on-resistance characteristics designed to enhance switching efficiency and extend battery life in low voltage applications.
• Integrated body diode characterized for bridge circuits, exhibiting high-speed operation with soft recovery properties.
• Automotive-grade qualification meeting AEC-Q101 standards with PPAP capability for unique site and control change requirements.

Applications

• DC-DC converters
• Computers
• Printers
• Cellular and cordless phones
• Disk drives and tape drives

Procurement Notes

Verify the specific ordering suffix 'R2G' corresponds to the required tape and reel packaging quantity of 2500 units per manufacturer specifications. Confirm that the NVMD prefix aligns with project requirements for automotive qualification and unique site control changes. Ensure compatibility with standard SOIC-8 soldering profiles and thermal management constraints defined in the datasheet maximum ratings.

Selection Notes

Select this component for designs requiring dual N-channel isolation within a compact footprint. Evaluate the 0.048 Ω on-resistance at 10 V gate drive against system efficiency targets. Consider the 30 V breakdown voltage margin relative to supply rails. Verify thermal dissipation capabilities using the specified junction-to-ambient resistance for the intended PCB pad size and ambient conditions.

Part Context

This part belongs to the NTMD4N03/NVMD4N03 family of dual N-channel power MOSFETs. The NVMD prefix specifically denotes devices intended for automotive and other applications requiring unique site and control change requirements, distinguishing it from the standard NTMD variant which lacks these specific qualification markers.

Replacement Considerations

NTMD4N03R2G serves as the non-automotive equivalent within the same electrical specification family. Both parts share identical pinouts and performance metrics but differ in manufacturing site controls and automotive qualification status.

FAQ

What is the typical on-resistance at a 4.5 V gate drive?

The typical static drain-to-source on-state resistance (RDS(on)) is 0.065 Ω when measured at VGS = 4.5 Vdc and ID = 2 Adc.

How is the SO-8 package pinout configured for this dual MOSFET?

Style 11 defines the pinout: Pin 1 is Source 1, Pin 2 is Gate 1, Pin 3 is Source 2, Pin 4 is Gate 2, Pins 5 and 6 are Drain 2, and Pins 7 and 8 are Drain 1.

Is the internal body diode suitable for hard-switching bridge applications?

Yes, the diode is explicitly characterized for use in bridge circuits and exhibits high-speed operation with soft recovery characteristics to minimize noise and switching losses.