NVMD6P02R2G

Overview

The NVMD6P02R2G is a dual P-Channel PowerTrench MOSFET manufactured by onsemi. It features a 20V drain-source voltage rating and a continuous drain current of 10A. The device exhibits a maximum on-resistance of 25mΩ at VGS = -4.5V. It utilizes an SOIC-8 surface-mount package with a lead-free finish. The component operates within a temperature range of -55°C to +150°C junction temperature. Key electrical parameters include a gate charge of 13nC and a forward transconductance of 8S. The part is designed for low-loss switching applications in power management circuits.

Feature Summary

• Dual P-Channel configuration integrated into a single compact package
• Ultra-low on-resistance optimized for high-efficiency power conversion
• Enhanced switching performance with reduced gate charge

Applications

• DC-DC converter synchronous rectification
• Power distribution networks
• Load switch applications

Procurement Notes

Verify the exact ordering suffix against official onsemi documentation to ensure correct tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet revision. Cross-reference the package marking code with the physical component to prevent counterfeit substitution during assembly.

Selection Notes

Select this component when a dual P-Channel topology is required for space-constrained designs. Ensure the thermal management solution supports the specified power dissipation limits. Verify that the gate drive voltage aligns with the threshold requirements for optimal RDS(on) performance.

Part Context

This part belongs to the NVMD series of dual MOSFETs from onsemi. It complements the N-channel variants like the NTMD6N02R2G by providing complementary high-side switching capabilities. The series targets efficient power management in portable and industrial electronics requiring compact footprints.

Replacement Considerations

Direct substitutes include other dual P-Channel MOSFETs with similar 20V ratings and SOIC-8 packaging. Verify pin compatibility and thermal characteristics before replacement. Check if alternative parts meet the same RDS(on) and gate charge specifications.