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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 11.6A 8DFN
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：11.6A (Ta), 61A (Tc)
- Rds On (Max) @ Id, Vgs：10.4mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：3V @ 97µA
- Gate Charge (Qg) (Max) @ Vgs：26nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1800pF @ 50V
- Power - Max：3.1W (Ta), 84W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-PowerTDFN
- Supplier Device Package：8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The NVMFD010N10MCLT1G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 100 V and a continuous drain current (Id) of 47 A. The device exhibits a typical on-resistance (Rds(on)) of 10 mΩ at a gate-source voltage (Vgs) of 10 V. Packaged in an 8-lead DFN surface-mount configuration, it supports a maximum power dissipation of 59 W and operates within a temperature range of -55°C to +175°C. The component holds AEC-Q101 automotive qualification.
Feature Summary
- Dual channel architecture for space-efficient circuit integration
- AEC-Q101 qualified for automotive reliability standards
- Low on-resistance design to minimize conduction losses
- RoHS compliant lead-free construction
Applications
- Automotive power distribution systems
- High-side and low-side switching applications
- DC-DC converter circuits
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Confirm that the requested part number matches the exact electrical ratings required for the target application. Ensure compliance with relevant environmental directives before finalizing procurement orders.
Selection Notes
Select this component when a compact dual MOSFET solution is required for 100 V automotive or industrial environments. Evaluate thermal management requirements based on the specified power dissipation limits. Compare total gate charge values against driver capabilities to ensure optimal switching performance in high-frequency designs.
Part Context
This device belongs to the NVMFD series of dual N-channel power MOSFETs from onsemi. The series utilizes advanced silicon technology to achieve low on-resistance within small footprint packages. These components are designed to meet the stringent quality and reliability demands of modern automotive electronics applications.
Replacement Considerations
Consult official cross-reference data for verified substitutes. Potential alternatives include other dual N-channel MOSFETs with matching 100 V ratings and comparable Rds(on) specifications. Verify pinout compatibility and thermal characteristics before implementation.
