NVMFD020N06CT1G

NVMFD020N06CT1G

$2.41
  • Description:MOSFET 2N-CH 60V 8A 8DFN
  • Series:-

SKU:bf847132a8e7 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 8A 8DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:8A (Ta), 27A (Tc)
  • Rds On (Max) @ Id, Vgs:20.3mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id:4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs:5.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:355pF @ 30V
  • Power - Max:3.1W (Ta), 31W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
  • Grade:Automotive
  • Qualification:AEC-Q101

Download product information

NVMFD020N06CT1G

Overview

The NVMFD020N06CT1G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It utilizes the DUAL SO8FL (DFN8 5x6) surface-mount package, measuring 5 mm by 6 mm. The device features a drain-to-source voltage rating of 60 V and a maximum continuous drain current of 27 A at 25 °C case temperature. Its typical drain-to-source on-resistance is 20.3 mΩ at a gate-to-source voltage of 10 V. Key electrical parameters include a total gate charge of 5.8 nC and a forward transconductance of 12 S. The component operates within a junction temperature range of -55 °C to +175 °C and is qualified under the AEC-Q101 standard.

Feature Summary

  • Compact 5x6 mm footprint designed for space-constrained applications
  • Low on-resistance minimizes conduction losses during operation
  • Reduced gate charge and capacitance lower driver power consumption
  • Wettable flank option available for enhanced optical inspection reliability

Applications

  • Battery management systems
  • Motor control circuits
  • Power distribution networks
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix when sourcing components. The 'T1G' designation indicates tape and reel packaging with 1500 units per reel. Confirm that the wettable flank variant is required if automated optical inspection is critical to the manufacturing process. Ensure compliance with RoHS standards and lead-free requirements for the intended assembly environment.

Selection Notes

Select this component for designs requiring high current handling in a small form factor. The 60 V rating suits low-voltage DC systems. Evaluate thermal resistance values against the specific PCB copper pad area, as ambient thermal performance depends heavily on board layout. Consider the 20.3 mΩ on-resistance for efficiency calculations at the target operating current levels.

Part Context

This device belongs to onsemi's PowerTrench portfolio of dual N-channel MOSFETs. It shares the DUAL SO8FL mechanical outline with other variants in the series, such as the NVMFD016N06C and NVMFD030N06C. These devices are engineered to provide improved thermal performance and reduced switching losses compared to traditional packages.

Replacement Considerations

Direct pin-compatible replacements within the same package family include the NVMFD016N06C and NVMFD030N06C. Verify that the alternative part's on-resistance and current ratings meet or exceed the design requirements before substitution.

NVMFD020N06CT1GNVMFD020N06CT1G
$2.41
Buy Now