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The NVMFD020N06CT1G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It utilizes the DUAL SO8FL (DFN8 5x6) surface-mount package, measuring 5 mm by 6 mm. The device features a drain-to-source voltage rating of 60 V and a maximum continuous drain current of 27 A at 25 °C case temperature. Its typical drain-to-source on-resistance is 20.3 mΩ at a gate-to-source voltage of 10 V. Key electrical parameters include a total gate charge of 5.8 nC and a forward transconductance of 12 S. The component operates within a junction temperature range of -55 °C to +175 °C and is qualified under the AEC-Q101 standard.
Verify the specific ordering suffix when sourcing components. The 'T1G' designation indicates tape and reel packaging with 1500 units per reel. Confirm that the wettable flank variant is required if automated optical inspection is critical to the manufacturing process. Ensure compliance with RoHS standards and lead-free requirements for the intended assembly environment.
Select this component for designs requiring high current handling in a small form factor. The 60 V rating suits low-voltage DC systems. Evaluate thermal resistance values against the specific PCB copper pad area, as ambient thermal performance depends heavily on board layout. Consider the 20.3 mΩ on-resistance for efficiency calculations at the target operating current levels.
This device belongs to onsemi's PowerTrench portfolio of dual N-channel MOSFETs. It shares the DUAL SO8FL mechanical outline with other variants in the series, such as the NVMFD016N06C and NVMFD030N06C. These devices are engineered to provide improved thermal performance and reduced switching losses compared to traditional packages.
Direct pin-compatible replacements within the same package family include the NVMFD016N06C and NVMFD030N06C. Verify that the alternative part's on-resistance and current ratings meet or exceed the design requirements before substitution.