NVMFD024N06CT1G

Overview

The NVMFD024N06CT1G is a dual N-channel power MOSFET from onsemi, housed in a DFN8 (SO-8FL) package with dimensions of 5x6 mm. It features a drain-to-source voltage rating of 60 V and a maximum continuous drain current of 24 A at TC = 25 °C. The device exhibits a maximum on-resistance (RDS(on)) of 22.6 mΩ at VGS = 10 V and ID = 3 A, with a typical value of 18.8 mΩ. Total gate charge (QG(TOT)) is typically 5.7 nC at VGS = 10 V and VDS = 48 V. The component is qualified to AEC-Q101 standards and supports PPAP requirements.

Feature Summary

• Compact 5x6 mm footprint designed for space-constrained applications
• Low RDS(on) minimizes conduction losses during operation
• Low total gate charge reduces driver circuit power consumption
• AEC-Q101 qualified and PPAP capable for automotive reliability

Applications

• Power tools and battery-operated vacuums
• UAVs/drones and material handling equipment
• Battery management systems (BMS) and storage solutions
• Home automation devices

Procurement Notes

Verify the specific ordering suffix 'T1G' corresponds to the tape and reel packaging configuration containing 1500 units per reel. Confirm that the standard NVMFD024N06CT1G variant meets your optical inspection needs; if enhanced inspection is required, verify availability of the wettable flank option designated as NVMFWD024N06CT1G. Ensure compliance with Pb-Free and Halogen Free/BFR Free RoHS standards for your manufacturing process.

Selection Notes

Select this component when a dual N-channel configuration is required within a 5x6 mm envelope. The 60 V rating suits low-voltage DC bus applications. Evaluate thermal performance based on steady-state junction-to-ambient resistance of 46.9 °C/W for surface-mounted FR4 boards. Consider the 22.6 mΩ maximum RDS(on) for efficiency calculations under high-current loads up to 24 A.

Part Context

This part belongs to onsemi's portfolio of small-footprint dual MOSFETs optimized for compact consumer and industrial electronics. It shares the SO-8FL mechanical outline with variants like the NVMFD030N06C but offers specific electrical characteristics tailored for 60 V operations. The family emphasizes miniaturization without sacrificing current handling capabilities.

Replacement Considerations

Publicly confirmed substitute part numbers are not provided in the source documentation. Verify pinout compatibility and electrical parameters against alternative dual N-channel MOSFETs before implementation.