NVMFD030N06CT1G

NVMFD030N06CT1G

$2.24
  • Description:MOSFET 2N-CH 60V 7A 8DFN
  • Series:-

SKU:eea01c130392 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 7A 8DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:7A (Ta), 19A (Tc)
  • Rds On (Max) @ Id, Vgs:29.7mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id:4V @ 13µA
  • Gate Charge (Qg) (Max) @ Vgs:4.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:255pF @ 30V
  • Power - Max:3.2W (Ta), 23W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
  • Grade:Automotive
  • Qualification:AEC-Q101

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NVMFD030N06CT1G

Overview

The NVMFD030N06CT1G is a dual N-channel power MOSFET from onsemi, housed in a DFN8 5x6 mm (SO-8FL Dual) package. It features a drain-to-source voltage of 60 V and a maximum continuous drain current of 19 A at TC = 25 °C. The device exhibits a typical on-resistance of 29.7 mΩ at VGS = 10 V and ID = 3 A. Electrical characteristics include a total gate charge of 4.7 nC, input capacitance of 255 pF, and reverse recovery time of 21 ns. Thermal resistance ratings are 6.3 °C/W junction-to-case and 46.6 °C/W junction-to-ambient under steady-state conditions.

Feature Summary

  • Small footprint design for compact applications
  • Low RDS(on) to minimize conduction losses
  • Low QG and capacitance to minimize driver losses
  • AEC-Q101 qualified and PPAP capable

Applications

  • Power tools and battery operated vacuums
  • UAV/Drones and material handling equipment
  • BMS/Storage systems and home automation

Procurement Notes

Verify the specific ordering suffix 'T1G' corresponds to the SO-8FL Dual package with tape and reel shipping configuration containing 1500 units per reel. Confirm that the wettable flank option is not required for this standard variant, as it is designated by the 'W' suffix in the NVMFWD030N06CT1G part number. Ensure compliance with Pb-Free and Halogen Free/BFR Free requirements during procurement.

Selection Notes

Select this component when a dual N-channel configuration is needed within a 5x6 mm footprint. The 60 V rating and 29.7 mΩ on-resistance make it suitable for low-voltage switching applications requiring moderate current handling up to 19 A. Consider thermal management constraints given the junction-to-ambient resistance of 46.6 °C/W for surface-mounted designs on FR4 boards.

Part Context

This device belongs to the NVMFD030N06C series from onsemi, designed for high-efficiency power switching. It shares the same electrical specifications as the standard NVMFD030N06C but is supplied in a tape and reel format for automated assembly. The series emphasizes compactness and low loss for portable and automotive-grade electronics.

Replacement Considerations

The NVMFWD030N06CT1G serves as a direct replacement if enhanced optical inspection via wettable flanks is required, sharing identical electrical parameters. Other variants within the NVMFD030N06C family may offer different packaging or current ratings; verify pinout compatibility and thermal characteristics before substitution.

NVMFD030N06CT1GNVMFD030N06CT1G
$2.24
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