NVMFD040N10MCLT1G

Overview

The NVMFD040N10MCLT1G is a dual N-channel enhancement mode power MOSFET manufactured by onsemi. It features a DFN-8 surface-mount package with a drain-source breakdown voltage (Vds) of 100 V and a continuous drain current (Id) of 21 A at case temperature of 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 39 mΩ at Vgs = 10 V. Gate-source voltage limits are ±20 V, with a threshold voltage (Vgs(th)) of 3 V. Total gate charge (Qg) is 8.4 nC. Power dissipation reaches 36 W at TC = 25°C. Operating junction temperature ranges from -55°C to +175°C.

Feature Summary

• Dual channel configuration integrates two independent N-channel MOSFETs within a single compact footprint for space-constrained designs.
• Enhanced thermal performance via direct copper bond technology in the DFN-8 package supports high power density applications.
• Automotive-grade reliability achieved through AEC-Q101 qualification and Production Part Approval Process (PPAP) capability.

Applications

• Automotive power distribution systems requiring high reliability and compact form factors.
• Low-side switching circuits in automotive lighting and motor control modules.
• DC-DC converter output stages where dual synchronized rectification is required.

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm lot traceability and AEC-Q101 compliance documentation when sourcing for automotive or safety-critical applications. Ensure storage conditions adhere to moisture sensitivity level requirements prior to soldering.

Selection Notes

Select this component when dual isolated channels are needed within a 100 V system architecture. Compare Rds(on) and thermal resistance values against single-channel alternatives to evaluate board space efficiency. Validate gate drive compatibility with the specified 3 V threshold and 8.4 nC total gate charge for optimal switching performance.

Part Context

This part belongs to onsemi's NVMFD series of dual MOSFETs designed for automotive and industrial markets. The series emphasizes reduced parasitic inductance and improved thermal conductivity compared to traditional SO-8 packages. It serves as a drop-in replacement for legacy dual MOSFET solutions requiring higher current handling in similar footprints.

Replacement Considerations

Direct substitutes include other onsemi dual N-channel MOSFETs in DFN-8 packages with comparable Vds and Rds(on) ratings. Verify pinout compatibility and thermal pad dimensions before substitution. Cross-reference electrical parameters such as Qg and Ciss to ensure equivalent switching behavior in the target circuit.