NVMFD5483NLWFT3G

NVMFD5483NLWFT3G

$1.63
  • Description:MOSFET 2N-CH 60V 6.4A 8DFN
  • Series:-

SKU:80e3dad85d0f Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 60V 6.4A 8DFN
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):60V
  • Current - Continuous Drain (Id) @ 25°C:6.4A
  • Rds On (Max) @ Id, Vgs:36mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:23.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:668pF @ 25V
  • Power - Max:3.1W
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:8-DFN (5x6) Dual Flag (SO8FL-Dual)
  • Grade:Automotive
  • Qualification:AEC-Q101

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NVMFD5483NLWFT3G

Overview

The NVMFD5483NLWFT3G is a dual N-channel power MOSFET from onsemi, housed in a DFN8 (SO-8FL) 5x6 mm surface-mount package. It features a drain-to-source voltage of 60 V and a continuous drain current of 24 A at TC = 25°C. The device has a maximum on-resistance of 36 mΩ at VGS = 10 V and 45 mΩ at VGS = 4.5 V. Total gate charge is 23.4 nC at VGS = 10 V. Operating temperature ranges from -55°C to 175°C. It is Pb-free, AEC-Q101 qualified, and PPAP capable.

Feature Summary

  • Small footprint design for compact applications
  • Low on-resistance to minimize conduction losses
  • Low capacitance to reduce driver losses
  • Enhanced optical inspection via wettable flank option

Applications

  • Automotive electronics systems
  • Power management circuits
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix 'WFT3G' against official documentation to confirm the 5000-unit tape and reel packaging configuration. Ensure compatibility with standard surface mount assembly processes and verify that the wettable flank variant meets the required optical inspection standards for the production line.

Selection Notes

Select this component when a dual N-channel configuration is required within a 5x6 mm footprint. Evaluate thermal resistance values based on the specific PCB copper pad area and heat sinking conditions. Confirm that the 60 V rating and 24 A current capacity align with the peak and steady-state requirements of the target circuit application.

Part Context

This part belongs to the NVMFD5483NL series of dual N-channel MOSFETs. It shares the same electrical characteristics as other suffixes like NLT3G or WFT1G but differs in packaging quantity and potentially physical construction details such as the wettable flank feature found in the WF variants.

Replacement Considerations

NVMFD5483NLWFT1G: Identical electrical specifications; differs only in tape and reel quantity (1500 units vs. 5000 units).

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C.

Is this device suitable for automotive applications?

Yes, it is AEC-Q101 qualified and PPAP capable.

What is the typical total gate charge?

The typical total gate charge is 23.4 nC at VGS = 10 V and VDS = 48 V.

NVMFD5483NLWFT3GNVMFD5483NLWFT3G
$1.63
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