NVMFD5485NLT1G

Overview

The NVMFD5485NLT1G is a dual N-channel power MOSFET in a DFN8 5x6 package. It features a drain-to-source voltage of 60 V and a maximum continuous drain current of 20 A at TC = 25°C. The on-resistance is 44 mΩ at VGS = 10 V and 60 mΩ at VGS = 4.5 V. Key electrical parameters include an input capacitance of 560 pF, total gate charge of 20 nC at VGS = 10 V, and a single-pulse avalanche energy rating of 31 mJ. The device supports a junction temperature range from -55°C to 175°C.

Feature Summary

• Dual configuration within a compact 5x6 mm footprint for space-constrained designs
• Low on-resistance minimizes conduction losses across standard operating conditions
• Low capacitance characteristics reduce driver switching losses
• Qualified for automotive applications with PPAP capability

Applications

• Automotive electronic systems requiring high reliability
• DC-DC converter circuits
• High-side and low-side load switch applications

Procurement Notes

Verify the specific ordering suffix (T1G) corresponds to the required tape and reel quantity of 1500 units per reel. Confirm that the DFN8 package variant matches the thermal management requirements of the target PCB layout. Ensure compliance with RoHS standards and lead-free specifications during component sourcing.

Selection Notes

Select this component when a dual N-channel topology is required within a small surface-mount area. Evaluate the 44 mΩ on-resistance against the expected load current to ensure acceptable power dissipation. Consider the 60 V breakdown voltage relative to the system's maximum supply voltage and transient spikes.

Part Context

This device belongs to onsemi's Power MOSFET portfolio, specifically designed for medium-voltage applications. It utilizes advanced silicon technology to achieve low RDS(on) while maintaining robust avalanche capabilities. The DFN8 package provides efficient thermal transfer through the exposed pad.

Replacement Considerations

Direct replacements must match the 60 V rating, dual channel configuration, and DFN8 5x6 footprint. Verify that substitute parts offer comparable RDS(on) values and gate charge specifications to maintain circuit efficiency and switching performance.